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Showing 1 to 1 of 1 for “"Traps behavior"”.
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HfO2 as gate dielectric on Si and Ge substrate
… density and low temperature charge trapping behavior of these structures were also investigated. Degradation in surface carrier mobility has been reported in Si field-effect-transistors with HfO_2 as gate dielectric. To explore the possibility of alleviating this problem we have used …