Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 7 of 7 for “"Transistors HEMT"”.
-
Degradation mechanisms of GaN high electron mobility transistors
… performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. However, physical understanding of the fundamental reliability mechanisms of GaN HEMTs is still …
-
Physics of electrical degradation in GaN high electron mobility transistors
The deployment of GaN high electron mobility transistors (HEMT) in RF power applications is currently bottlenecked by their limited reliability. Obtaining the required reliability is a difficult issue due to the high voltage of operation. In order to improve reliability, it is essential to develop …
-
Third Order Nonlinearity In III-Nitride Microwave Switches
… pin- diodes GaAs high electron mobility transistors (HEMT) and MEMS due to high breakdown, very low insertion loss, higher isolation, high switching power and low power consumption. An important switch characteristic is the level of introduced nonlinear distortions. Intermodulation …
-
Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise
<p>Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike …
-
High Frequency, High Power Density GaN-Based 3D Integrated POL Modules
… its theoretical limits. The recently emerged GaN transistors as a possible candidate to replace silicon devices in various power conversion applications. GaN devices are high electron mobility transistors (HEMT) and have higher band-gap, higher electron mobility, and higher electron velocity than …
-
Investigation of Threshold Voltage Instability in Normally Off GaN on Si HEMT
… AlGaN/GaN on Si High Electron Mobility Transistors (HEMT) have gained unprecedented commercial attention. Normally off HEMT devices are essential to design robust power systems. Of the various normally off HEMT architectures p- GaN HEMT has significant traction. Despite the advancements, …
-
Modélisation du comportement non-linéaire de transistors hyperfréquences avec polynômes multivariées optimisés par essaims particulaires
… Les nouvelles technologies de fabrication des transistors ont aussi fait apparaître des comportements beaucoup plus non-linéaires au niveau du fonctionnement des transistors. Les modèles classiques ne s’adaptent pas très bien à ces non-linéarités puisqu’ils ont été construits à partir …