Global ETD Search
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Showing 1 to 4 of 4 for “"Transistor GaN"”.
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Modernized Power Converter Development Platform for Educational Applications
… the benefits of Gallium Nitride Field Effect Transistor (GaN-FET) switching converters, detailing the development of a platform intended to clearly display their performance benefits over Silicon-based converters, as well as demonstrating the key design principles that become more significant …
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Modelling of Multichannel GaN Transistors
The Gallium Nitride High Electron Mobility Transistor (GaN HEMT) is the representative GaN-based wide bandgap semiconductor device. It has been one of the most promising research topics due to its excellent electronic properties in high power, high frequency and high temperature applications. The …
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AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework
… investigate the performance of 5 nm gate-length GaN n-type nanowire field-effect transistor (GaN-NW-nFET) of various geometrical shapes as a promising alternative to high-performance Si FETs, complementing 2D-based TFETs, which are aimed for low-power applications. Benchmarking results with …
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Conception et réalisation des bobines PCB à base de matériau magnétique souple pour des convertisseurs HF
L'arrivée sur le marché des transistors au Nitrure de Gallium (GaN) permet l'augmentation de la fréquence de commutation des convertisseurs statiques. La conséquence directe est la réduction des dimensions des composants passifs et l'augmentation de la densité de puissance des convertisseurs. Les …