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Showing 1 to 10 of 10 for “"Titanium silicide"”.

  1. Kinetic optimization of titanium silicide chemical vapor deposition

    Southwell, Robert PeterUniversity of Illinois at Urbana-Champaign2011

    Titanium disilicide (TiSi$\sb 2$) has found widespread application as a material for transistor gate/source/drain contacts. Considerable interest has arisen in fabrication by chemical vapor deposition (CVD) because of scalability problems with the salicide process (a Ti-Si solid-phase reaction) …

    uiuc Repository record

  2. Surface Chemistry of Titanium Silicide Thin Film Deposition

    Michael Anthony, MendicinoUniversity of Illinois at Urbana-Champaign2023

    uiuc

  3. Chemical kinetic studies of titanium silicide chemical vapor deposition

    Mendicino, Michael AnthonyUniversity of Illinois at Urbana-Champaign2011

    Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:48:04Z Item is restricted indefinitely.

    uiuc Repository record

  4. Microstructure and chemistry of thermal oxide on titanium silicide thin film

    Chun, Kaynam

    sjsu Repository record

  5. Low energy ion beam modification of the titanium silicide (100) reaction

    Scott, Philip ArthurUniversity of Illinois at Urbana-Champaign2011

    This research investigated the effects of the ion beam assisted deposition process on the interdiffusion and reaction of Ti thin films deposited on Si (100). The analytical techniques employed for the characterization of these thin films included transmission electron microscopy, scanning electron …

    uiuc Repository record

  6. Surface Studies for the Perdictive Modelling of Titanium Silicide Chemical Vapor Deposition

    Southwell, Robert PeterUniversity of Illinois at Urbana-Champaign2023

    uiuc

  7. Cobalt silicide characterization

    Alldredge, Donovan

    … which leads to degraded device performances. Silicides can reduce sheet resistance on poly-silicon lines and shallow junctions. The mostly widely accepted silicide process, Titanium Silicide (TiSi2), was adopted because of its low resistivity. Major limitations of TiSi2 include an inability to …

    unlv Repository record

  8. Characterisation of mechanically alloyed feedstock for laser-powder bed fusion: titanium silicon carbide metal matrix composite

    Lyall, IainUniversity of Wolverhampton2020

    … Herein, a metal matrix composite (MMC) with a titanium (Ti6Al4V) matrix reinforced with silicon carbide (SiC) is characterised. The research investigated an innovative and novel feedstock production process involving elements of mechanical alloying, tailored to the requirements of the layer …

    wlv Repository record

  9. Shape and Stability of Epitaxial Nanostructures Evolving under Growth or Annealing

    Sunda Meya, Anderson2007

    … 700 C. The formation, growth and decay of the silicide nanowires were observed by real time imaging using photo electron emission microscopy (PEEM). We report on the decay of the nanowires at different temperatures between 700 and 800 C. Upon annealing, we observe that the nanowires width …

    ncsu Repository record

  10. Manufacturing Design and Fabrication of 100 nm (Leff) CMOS Devices

    Parikh, Samarth

    rit Repository record