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Showing 1 to 1 of 1 for “"Time dependant dielectric breakdown"”.
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Reliability Studies of TiN/Hf-Silicate Based Gate Stacks
… in the context of MOS band diagram for the first time in Hf-silicate gate stacks from low temperature and leakage measurements. Excellent match between experimental and calculated defect levels shows that bulk O vacancies are probably responsible for electron trapping at both shallow and deep …