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Showing 1 to 8 of 8 for “"Threshold Switching"”.

  1. Electrical transport and switching in phase change materials

    … memory types. A precondition for fast switching from the low conductive amorphous phase into the high conductive crystalline phase is a phenomenon called threshold switching. At a characteristic threshold field the amorphous phase becomes highly conductive entering the so called …

    aachen Repository record for Electrical transport and switching in phase change materials (opens in a new tab)

  2. Electronic switching in phase-change materials

    … DRAM. Investigations regarding the memory switching speed in phase-change memory will be presented in this work, and reveal that the phase transitions can be accomplished within a few nanoseconds. This demonstrates the potential of PCMs to compete with DRAM in terms of speed. The second …

    aachen Repository record for Electronic switching in phase-change materials (opens in a new tab)

  3. A STUDY OF SWITCHING PHENOMENA IN DISCONTINUOUS AU AND TI FILMS

    … have been reported to exhibit memory and threshold switching properties. Presently, researchers are concentrating on the amorphous semiconductors. However, switching properties have been reported in discontinuous thin metal films, and this thesis reports on results for discontinuous gold …

    sask Repository record for A STUDY OF SWITCHING PHENOMENA IN DISCONTINUOUS AU AND TI FILMS (opens in a new tab)

  4. Development of Strontium Titanate Based Nanomaterials for Resistive Switching Applications

    Recently, resistive switching devices have emerged as promising candidates for next generation non-volatile memory and neuromorphic computing applications. In general, resistive switching device consists of a two-terminal metal-insulator-metal structure, in which metal oxide is widely employed as …

    unsw Repository record for Development of Strontium Titanate Based Nanomaterials for Resistive Switching Applications (opens in a new tab)

  5. Optical packet networking using optical time division multiplexing.

    … are based on 1x2 TOAD routers. Results show that threshold switching energy is present at 0.2 pJ. Higher values result in a decrease in crosstalk and lower values result in negligible switching. Also shown is crosstalk induced penalty depends on the crosstalk level of individual 1x2 switches as …

    sheffield-hallam Repository record for Optical packet networking using optical time division multiplexing. (opens in a new tab)

  6. System simulation using digital stochastic computing structures.

    … 5. This study also demonstrates the way in which threshold switching is obtained in the stochastic computer. The problem examined in this chapter is a maximisation problem but the mathematics can be easily altered to cope with a minimisation problem. Circuits for determining the parameters of …

    rgu Repository record for System simulation using digital stochastic computing structures. (opens in a new tab)

  7. Scaling study of phase change memory using carbon nanotube electrodes

    … inside these gaps. We demonstrate reversible switching with programming currents from 1 to 8 µA, more than 100× lower than state-of-the-art PCM devices, enabled by the very small volume of PCMs addressed with a single CNT. We performed a device scaling study on more than 100 such devices, …

    uiuc Repository record for Scaling study of phase change memory using carbon nanotube electrodes (opens in a new tab)

  8. Phase change materials for non-volatile electronic memories

    … criticizes the popular approach of studying the switching of electronic cells for phase change based memories without an in-depth research of the crystallization kinetics. After this identification of the research objective, the result of a thorough review of the literature on the theory of …

    aachen Repository record for Phase change materials for non-volatile electronic memories (opens in a new tab)