Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 48 for “"Thin Film Growth"”.
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Electrochemical Thin Film Growth Assisted by Pb Monolayer
The properties of heteroepitaxial thin films are very much dependent on the method used for their deposition. The electrochemical/electroless deposition represents the ambient temperature growth process for many heteroepitaxial metal overlayers while preserving the integrity of their interface. …
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X -Ray Studies of Metal Thin Film Growth on Semiconductors
… for an investigation of the structure of Ag films deposited in situ on Ge(111) over the thickness range of 3--15 monolayers. The films deposited at a substrate temperature of 110 K are not well ordered, but become well ordered upon annealing, as evidenced by substantial changes in the x-ray …
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X-ray studies of metal thin film growth on semiconductors
… on Si(111)-(7 × 7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer …
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Characterization of a novel methyl radical source and related thin film growth studies
… a mass spectrometer or used in nucleation and growth experiments.;The characterization studies showed that a "clean" flux of CH3 radicals was produced for a 7.5% CH4 mixture, a source pressure of 200 mT and a residence time of ∼60 ms. The flux of CH3 radicals in this case was 3.3 x 1014 cm …
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Mechanisms for Orientation in Low Energy Ion Beam Assisted TiAlN Thin Film Growth
… structure of off-normal sputter deposited TiAlN thin films has been investigated with the goal of better understanding the mechanistic pathways in ion beam assisted thin film growth for better control of film properties during deposition. The effects of incident angle for ion bombardment has been …
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Fundamental study of nucleation and heteroepitaxial thin film growth using ionized source beam
… indicate that the two dimensional cluster growth would be favored by the enhanced coalescence if the neutral clusters are ionized during deposition.
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Understanding the origins of metastability in thin film growth; tantalum and the early group VB-VIB metals
… industry, where it is largely used in thin film modifications in order to achieve various electronic, magnetic and structural capabilities in solid-state devices. Ta frequently forms metastable phases, including the well-known ss-phase, during the preparation of thin Ta films by …
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Computational Study of Low-friction Quasicrystalline Coatings via Simulations of Thin Film Growth of Hydrocarbons and Rare Gases
… lubricant is commonly used, knowledge of how a film of lubricant forms on the coating is required. Any adsorbed films having non-quasicrystalline structure will reduce the self-lubricity of the coatings. In this manuscript, we report the results of simulations on thin films growth of selected …
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Evaluation of fluid dynamic effect on thin film growth in a horizontal type meso-scale chemical vapor deposition reactor using computational fluid dynamics
… aim of this thesis research is to understand how thin film uniformity can be controlled in a CVD reactor. A complete understanding of chemical reactions that take place both in gas phase and at the deposition surface is required to predict thin film properties such as growth rate and composition …
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Synthesis And Characterization Of Group 5 Metal Complexes Containing Pyrazolate, Amidate, And Related Ligands As Potential Precursors For Thin Film Growth By Atomic Layer Deposition
… and is used to deposit smooth and conformal thin films for applications in the microelectronics industry. ALD requires metal precursors that are sufficiently volatile and thermally stable at elevated temperatures. Several group 5 ALD and CVD precursors were reported in the literature, which …
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Structure and epitaxy studies of cobalt silicide/silicon heterostructures
… diffusion, silicide spike formation during CoSi thin film growth, and volumetric contractions during the CoSi $\to$ CoSi$\sb2$ phase transformation. Multilayer Si$\sb{\rm a}$/Co/Si$\sb{\rm c}$ thin film deposition is an effective processing technique for controlling microstructure and preventing …
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A real-time study of hydrogenated amorphous silicon, microcrystalline silicon, and amorphous silicon carbide growth by optically enhanced infrared reflectance spectroscopy
… spectroscopy technique is presented to study thin film growth in real time. Here, real time means under actual processing conditions, with a short data acquisition time compared to film changes or growth rates. This technique has industrial application in monitoring and controlling processes …
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Investigation of Ohmic Contacts for Gallium Nitride-Based Power Electronic Devices Using Molecular Beam Epitaxy
… epitaxy (PAMBE). The work specifically involved thin film growth, film characterization, device fabrication and device characterization. To develop the SAG technique and study the effect of etchants on single crystal GaN layers during ohmic contact fabrication, surface bonding and surface …
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Processing and characterization of lithium niobate thin films for ferroelectric nonvolatile memory applications
Both highly c-axis and randomly-oriented LiNbO3 thin films are grown on p-type Si (111) substrates by RF magnetron sputtering and metallo-organic decomposition (MOD), respectively. Ellipsometry, X-ray diffraction, AFM and SEM are used to analyze the structural quality of the deposited ferroelectric …
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Electroless Atomic Layer Deposition
Thin film growth is studied by many researchers because of broad applications and significant impact on technological development in modern era. However, thin film nucleation and growth is challenging task for many materials with high surface energy and melting temperature. Such systems tend to …
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Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy
… research on GaN compound semiconductors includes thin film growth, material characterization, device fabrication, and device characterization using state-of-the-art semiconductor processing equipment and characterizing tools. High-quality GaN films grown by plasma-assisted molecular beam epitaxy …
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