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Showing 1 to 20 of 34 for “"Thermionic emission"”.

  1. Thermionic emission from a recrystallized tungsten filament

    … was constructed to measure the point-by-point thermionic emission parameters of a tungsten single crystal with {110} zone 8° to 10° off filament axis. Pecrystallization of the filament was achieved by the Robinson (27) method of heating treatment. The average <}>* and A* were found to be 4.485 …

    moncton Repository record for Thermionic emission from a recrystallized tungsten filament (opens in a new tab)

  2. Thermionic emission parameters of tantalum single crystals in spherical geometry

    La méthode de production de cristaux sphériques introduite par Monsieur H. F. Webster (13) fut modifiée. Ces modifications ont produit des cristaux ayant un système de chauffage amélioré. Un cristal de tantale fut fixé a l’intérieur d’un tube a projection qui fut développé pour permettre des …

    moncton Repository record for Thermionic emission parameters of tantalum single crystals in spherical geometry (opens in a new tab)

  3. Carrier Escape from Semiconductor Quantum Wells

    … experimentally. Calculations of the tunnelling, thermionic emission, and thermally-assisted tunnelling escape times are given, where the thermionic emission process is split into low and high field regimes. At low fields, the escape rate is limited by the diffusion of the continuum carriers away …

    mcmaster Repository record for Carrier Escape from Semiconductor Quantum Wells (opens in a new tab)

  4. Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

    … versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current or leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky …

    calpoly Repository record for Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors (opens in a new tab)

  5. Development of off-axis photoemission for 4-dimensional ultrafast electron microscopy

    … In typical TEG based UEM architectures, photoemission is carried out from an on-axis LaB6 conical filament large enough to mitigate the effects of laser pointing stability changes. Such designs also have the advantage of versatility: the LaB6 can be aligned and used for both thermionic …

    umn Repository record for Development of off-axis photoemission for 4-dimensional ultrafast electron microscopy (opens in a new tab)

  6. Double-gated isolated vertically aligned carbon nanofiber field emission and field ionization arrays

    … spectrum is usually very noisy. In addition, the thermionic emission electron source used in ElI has a slow response time and consumes large amount of power. To address these two issues, double-gated vertically aligned carbon nanofiber (VACNF) field emission and field ionization arrays have been …

    mit Repository record for Double-gated isolated vertically aligned carbon nanofiber field emission and field ionization arrays (opens in a new tab)

  7. Laser Processed Materials for Advanced Solar Devices

    … a-Si:H thin film as a promising field & thermionic emission candidate, and 2) a novel dark film – black silicon, which can highly absorb lights. And finally, a thermionic emission enhanced renewable energy device is purposed, which also adopt black silicon as the sunlights …

    dundee Repository record for Laser Processed Materials for Advanced Solar Devices (opens in a new tab)

  8. Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors

    … and is employed for applying the diffusion, the thermionic emission, and the tunneling theories in investigating the injection mechanisms at the e-b heterojunction interface. The diffusion transport is considered first for electron injection from the emitter into the base. The thermionic emission …

    vt Repository record for Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors (opens in a new tab)

  9. The Interaction of Simple Gases with Hot Metal Filaments

    … surfaces employed was observed using both thermionic emission and contact potential measurements and the most important factor determining the emission properties was found to be the formation of carbides by reaction of the metal with the methyl group. The physical and thermionic emission …

    aston Repository record for The Interaction of Simple Gases with Hot Metal Filaments (opens in a new tab)

  10. The self-consistent simulation of carrier transport and its effect on the modulation response in semiconductor quantum well lasers

    … treated with ballistic transport derived from thermionic emission theory. In addition, the first treatment of carrier capture in a quantum well laser simulator is presented, and a net capture rate is derived.

    uiuc Repository record for The self-consistent simulation of carrier transport and its effect on the modulation response in semiconductor quantum well lasers (opens in a new tab)

  11. Electrical properties of metal/wse2structures

    … range of 80K to 400K well within the domain of thermionic emission theory. Topics covered here include the factors that determine the Schottky barrier height, the device capacitance, and its current-voltage (I-V) characteristics. I-V curves for different metals on WSe2 are analyzed as function …

    njit Repository record for Electrical properties of metal/wse2structures (opens in a new tab)

  12. High-Speed and High-Sensitivity Metal-Semiconductor-Metal Photodetectors for Optoelectronic Integrated Circuit Applications

    … afford a reduction in dark current by reducing thermionic emission processes at the Schottky contacts of the MSMPDs. An MSMPD exhibiting 52.9 pA of dark current corresponding to a dark current density of 21.1 fA/$\rm\mu m\sp2$ was demonstrated.

    uiuc Repository record for High-Speed and High-Sensitivity Metal-Semiconductor-Metal Photodetectors for Optoelectronic Integrated Circuit Applications (opens in a new tab)

  13. One-dimensional simulation of vertical-cavity surface-emitting lasers including energy transport

    … drift-diffusion with carrier-capture and thermionic emission in the quantum regions. Microcavity effects on the stimulated and spontaneous emission are carefully included via the enhancement of the vacuum and radiating electromagnetic fields in a VCSEL. A modified photon rate equation is …

    uiuc Repository record for One-dimensional simulation of vertical-cavity surface-emitting lasers including energy transport (opens in a new tab)

  14. Photon-induced tunneling in graphene-boron nitride-graphene heterostructures

    … at zero bias voltage, indicating the presence of thermionic emission near the charge neutrality point..

    mit Repository record for Photon-induced tunneling in graphene-boron nitride-graphene heterostructures (opens in a new tab)

  15. Towards and industrial ecosystem for power MEMS

    … or photovoltaic effects, or else via thermionic emission. Finally, we consider devices which scavenge vibrational or electromagnetic energy from their environment, and are an attractive means of powering remote autonomous sensors or medical implants such as pacemakers.

    mit Repository record for Towards and industrial ecosystem for power MEMS (opens in a new tab)

  16. Leakage gate current in a heterostructure field effect transistor

    … current, namely 2-D tunneling, 3-D tunneling and thermionic emission current, are considered. The conduction band edge profile of the HIGFET is obtained by a self consistent solution to the Poisson and Schroedinger equations. The transmission coefficient for 2-D and 3-D tunneling currents is …

    unlv Repository record for Leakage gate current in a heterostructure field effect transistor (opens in a new tab)

  17. Superlattice-source nanowire FET with steep Subthreshold characteristics

    … new subthreshold transport mechanisms other than thermionic emission over an energy barrier are required. In this thesis, we devote our efforts towards the analysis and demonstration of a superlattice-source nanowire FET which can potentially beat the 60 mV/dec limit. This key to this device …

    mit Repository record for Superlattice-source nanowire FET with steep Subthreshold characteristics (opens in a new tab)

  18. Ultra-scaled III-V Vertical Tunneling Transistors

    … charge carrier transport mechanisms other than thermionic emission over an energy barrier have received considerable attention. Among all possible mechanisms, quantum mechanical tunneling has emerged as one of the most promising, and the design and demonstration of Tunnel Field-Effect …

    mit Repository record for Ultra-scaled III-V Vertical Tunneling Transistors (opens in a new tab)

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