Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"Thermal Anneal"”.
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Heating it up: a novel approach to annealing soluble organic semiconductors
… which is used as the gate. A 400nm thick thermally grown oxide is used to insulate the semiconductor gate from the Ti/Au source and drain leads. The as-deposited TES-ADT film is amorphous, and recent work by the Anthony group at the University of Kentucky has shown that this film can be …
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Cobalt silicide characterization
… spiking, void formation, sheet resistivity, thermal stability, and agglomeration. There are four process variables in this study: the first rapid thermal anneal (RTA) temperature and ramp rate, the Co and TiN removal time, and the second RTA temperature. (Abstract shortened by UMI.).
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Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS)
… of the Schottky diodes was evaluated and their thermal stability also was studied. The interposition of Pt in Ni/Au and Ir/Au systems was found to improve the characteristics of the Schottky diodes. Ir/Pt/Au diodes were found to be more thermally stable than Ni/Pt/Au diodes. Ni/Au Schottky …
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Magneto-optical and multiferroic oxide thin films, integrated nonreciprocal photonic devices and multiferroic memory devices
… = 1550 nm for all substrate orientations). The thermal budgets of Ce: YIG growth on ShN4 (2 high temperature PLD steps and a rapid thermal anneal, RTA), silicon-on-insulator substrates (a high and a low temperature PLD step and a RTA) and optical resonator chips (one PLD step, one RTA, YIG seed …
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Microstructural Analysis of Garnet-Heavy Metal Heterostructures
… grown on Si with PMA due to an external rapid thermal anneal after pulsed laser deposition [8]. However, crystallization is limited to thicknesses above 20 nm. Furthermore, Pt is often used as a heavy metal for investigating interfacial phenomena in REIGs [9,10,11]. However, the REIG film …
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Investigations of ultra shallow junction ion implanted biaxial tensile strained silicon by means of X-Ray, Raman and photoacoustic techniques
… to low energy antimony implants and low thermal budget rapid thermal anneal (RTA), for the production of ultrashallow, abrupt junctions, appropriate for future generation source-drain extensions (SDE). Examined in the wider project are the effects of strain on dopant activation and …
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Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques
… strain engineering and maskless hydrogen thermal annealing are investigated in this thesis to enhance carrier mobility in gate-all-around nanowire MOSFETs. Uniaxial tensile stress of about 2 GPa was incorporated for the first time into suspended Si nanowire channels by a novel lateral …