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Showing 1 to 4 of 4 for “"Tantalum films."”.

  1. Synthesis and characterization of plasma enhanced chemically vapor deposited tantalum films

    … has been developed for the growth of Ta using tantalum pentachloride (TaC15) as the preferred precursor and hydrogen as the reactant gas. Ta coatings were deposited at substrate temperature of 370-400 C, reactor working pressures of 0.7-2 Ton, hydrogen carrier flow rate of 10-20 sccm, hydrogen …

    njit Repository record for Synthesis and characterization of plasma enhanced chemically vapor deposited tantalum films (opens in a new tab)

  2. Deposition of tantalum thin films by RF sputtering with substrate bias

    … the crystallographic structure of RF sputtered tantalum thin films on different substrates, particularly aluminum and silicon, have been studied. The effect of substrate biasing on ion current and film thickness has been investigated. The study included comparison between substrate ion current …

    njit Repository record for Deposition of tantalum thin films by RF sputtering with substrate bias (opens in a new tab)

  3. Ion assisted magnetron sputtering of tantalum thin film deposition and characterization

    … bombardment on the crystallographic phases of tantalum films during their deposition by magnetron sputtering process, and to gain understanding of the mechanism of the ion-solid interactions during the thin film growth. Tantalum (Ta) exists in two distinct crystallographic phases: a stable …

    njit Repository record for Ion assisted magnetron sputtering of tantalum thin film deposition and characterization (opens in a new tab)

  4. Tantalum- and ruthenium-based diffusion barriers/adhesion promoters for copper/silicon dioxide and copper/low κ integration.

    The TaSiO6 films, ~8Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates at 300 K, followed by annealing to 600 K in 2 torr O2. X-ray photoelectron spectroscopy (XPS) measurements of the films yielded a Si(2p) binding energy at 102.1 eV and Ta(4f7/2) binding energy at …

    unt Repository record for Tantalum- and ruthenium-based diffusion barriers/adhesion promoters for copper/silicon dioxide and copper/low κ integration. (opens in a new tab)