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Showing 1 to 1 of 1 for “"TaF5"”.
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Chemical vapor deposition of thin films for ULSI interconnect metallization
… of tantalum thin films using SiH4 reduction of TaF5. Using a temperature of 350„aC and reactant partial pressures of 0.2 Torr TaF5 and 0.3 Torr SiH4, we obtain a growth rate of 2.2 ¡Ó 1.7 nm/min. The XPS analysis results show that the Ta film is Si free, but contains relatively high oxygen …