Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 16 of 16 for “"TFET"”.
-
Tunneling Field-Effect Transistors for Low Power Logic: Design, Simulation and Technology Demonstration
The tunneling field-effect transistor (TFET) is a promising device candidate to overcome the 60 mV/decade subthreshold swing (S) limitation of the conventional metal-oxide-semiconductor field-effect transistor (MOSFET). TFET exploits gate modulated band-to-band tunneling (BTBT) to achieve a steep S …
-
Modeling and simulation of nano-scale transistor
… presents the research on tunneling FET (TFET) and InAs MOSFET device models. ☐ For MOSFETs, the theorical limit of 60 mV/dec has posed an undesirably high-power consumption during the on/off switch. The high off-status leakage current causes problems for digital circuit applications. …
-
Fundamental limits of the switching abruptness of tunneling transistors
The tunneling field-effect transistor (TFET) is one of the most promising candidates for future low-power electronics because of its potential to achieve a subthreshold swing less than the 60 mV/decade thermal limit at room temperature. It can surpass this limit because the turn-on of tunneling …
-
First principles modelling of tunnel field-effect transistors based on heterojunctions of strained Germanium/InGaAs alloys
… Germanium on InGaAs alloy tunnel FET (TFET). The type of device depends on the band alignments at the heterojunction. For example, it determines if it can work as a TFET or a MOSFET. In turn, the band alignments depend on the atomistic details of the interface structure. …
-
Technological Solution beyond MOSFET and Binary Logic Device
… beyond Binary Logic and MOSFET technology. TFET considered as one of the most promising options for low-power application for beyond MOSFET technologies. Graphene Nano Ribbon, due to its high-carrier mobility, tunable bandgap and its outstanding electrostatic control of device gate becomes …
-
Interband quantum tunneling at the band-edges in III-V semiconductor heterojunctions for low-power logic and detectors
… known as a tunnel field effect transistor (TFET), and in the latter application, it can allow for curvature coefficients greater than the thermal limit of 38.7 V-¹. However, predictions of stellar performance from simulation studies have not yet been matched experimentally, particularly in …
-
Ultra-scaled III-V Vertical Tunneling Transistors
… of Tunnel Field-Effect Transistors (TFETs) has been an object of great interest in the past few years. In spite of intense research and promising simulation predictions, the results to date have been disappointing: the combination of high drive current and sub-thermionic switching …
-
Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices
… such as the tunnel field-effect transistor (TFET), are projected to continue transistor miniaturization beyond the Si CMOS era. Unlike conventional MOSFET technology, TFETs operate on the band-to-band tunneling injection of carriers from source to channel, thereby resulting in steep switching …
-
Energy efficient core designs for upcoming process technologies
… -- Tunneling Field-Effect Transistors (TFETs), that is expected to supplement CMOS device technology in the near future. TFETs can attain much higher energy efficiency than CMOS at low voltages. However, their performance saturates at high voltages and, therefore, cannot entirely replace …
-
InGaAs/GaAsSb quantum-well Tunnel-FETs for ultra-low power applications
The Tunnel-FET (TFET), where carrier injection is determined by gate-controlled tunneling from the source to the channel, has been attractive as one of the promising candidates for future ultra-low power applications. In this thesis, inline-TFETs with tunneling direction aligned to the gate …
-
Advanced Energy-Efficient Devices for Ultra-Low Voltage System: Materials-to-Circuits
… must be introduced. In this work, tunnel FETs (TFETs), which operate leveraging quantum mechanical tunneling, are investigated. A comprehensive investigation detailing electronic materials, to novel TFET device designs, to memory and logic digital circuits based upon those TFETs is provided in …
-
Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors
… circuits. Tunnel field-effect transistors (TFETs) benefit from steep switching characteristics due to the quantum-mechanical tunneling injection of carriers from source to channel, rather than by conventional thermionic emission in MOSFETs. TFETs based on group III-V compound semiconductor …
-
InGaAs/GaAsSb type-Il heterojunction vertical tunnel-FETs
… with steep SS have been proposed. Tunnel-FETs (TFETs) are among the most attractive device structure due to their compatibility with conventional CMOS technology and the potential for outstanding VDD scalability. Heterostructure vertical TFETs with enhanced gate modulation promise significantly …
-
Tensile-Strained Ge/InₓGa₁₋ₓAs Heterostructures for Electronic and Photonic Applications
… materials and tunnel field-effect transistors (TFETs), have been proposed as solutions for the beyond Si era. TFETs benefit from steep switching characteristics due to the band-to-band tunneling injection of carriers from source to channel. Moreover, the narrow bandgaps of III-V and germanium …
-
Toward high-performance, low-power, carbon-based interconnects and transistors
… such as the tunneling field effect transistor (TFET) and the impact ionization transistor (I-MOS) use novel carrier injection techniques to improve performance, but do not extend benefits beyond a single generation. For continued scaling, one-dimensional carbon nanotubes (CNTs) appear to be …
-
AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework
… (2D) materials-based tunnel FETs (TFETs) are especially in the spotlight nowadays. In this dissertation, we provide insights/guidelines on designing 2D materials-based TFETs using a first-principles multiphysics framework coupling density functional theory (DFT) and non-equilibrium …