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Showing 1 to 2 of 2 for “"TEM sample preparation"”.
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Characterization of III-V compound semiconductor heterostructures grown by metalorganic chemical vapor deposition
… purposes, it is required to produce high quality samples with uniform layer thickness, no defects, and abrupt interfaces. For this metalorganic chemical vapor deposition (MOCVD) is one of the most important growth methods. In this study, transmission electron microscopy (TEM) was used for the …
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Transmission Electron Microscopy Preparation and Characterization of Bulk ZnO and Au(111) / ZnO(000-1) Heterostructures
Several preparation techniques were investigated, including (a) dimpling and ion milling, (b) hand-held tripod polishing and (c) automatic tripod polishing, to prepare electron transparent samples of ZnO suitable for transmission electron microscopy (TEM). Thinned ZnO became prone to cracking below …