Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 17 of 17 for “"TCAD simulations"”.
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Behavioral Modeling of CMOS SPADs Based on TCAD Simulations
… Athena from the Silvaco tools suite to feed a TCAD simulator with an accurate model structure that can include fabrication defects. Extract its key parameters with TCAD simulation of the device, performed with ATLAS, from the Silvaco TCAD tools suite. Combine physical parameters and analytical …
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Performance limits of silicon solar cells due to structural defects
… model into technology computer aided design (TCAD) simulations of high-efficiency solar cells are presented. The model and method are validated by comparison to analysis of the material properties and device performance of silicon solar cells containing structural defects. TCAD simulations …
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Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments
… present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or …
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High-voltage ESD PNP clamp simulation and design
… discharge (ESD) PNPs are studied through TCAD simulation and device measurement. PNPs for three different voltage classes, 16 V, 65 V, and 100 V, in a 0.5-µm Bipolar CMOS DMOS (BCD) technology are used as the context for the study. The PNPs are varied in choices of topology, layout …
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Development of Low Gain Avalanche Detectors for Astroparticle Physics Experiments in Space
… of the LGADs from 1 mm2 to 1 cm2 is presented. TCAD simulations have been performed to obtain the process parameters for the gain layer to achieve a gain of 100 thought to improve the time resolution for larger channel areas. A batch of 16 wafers has been produced to study the adaptation of …
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Investigation of Threshold Voltage Instability in Normally Off GaN on Si HEMT
… novel measurement techniques and a comprehensive TCAD modelling. This thesis starts by analytically understanding the design parameters across the gate stack which have a significant control on the threshold voltage (VTH). The measurement induced VTH instability is quantified for the first time …
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p-GaN Platform for Next-Generation GaN Complementary Transistors and Circuits
… a combination of experimental measurements and TCAD simulations. The p-FET (based on GaN-CMOS platform) and p-GaN-gate n-FETs are analyzed for high temperature operation. Lastly, in order to aid the future design of more complex circuits based on the p-GaN platform, a device-to-circuit CAD …
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Optical design guidelines for spectral splitting photovoltaic systems : a sensitivity analysis approach
… technology computer aided design (TCAD) simulations to develop design guidelines for optical components used for this purpose. Two optical parameters, spectral fidelity -- the fraction of photons that are absorbed by the intended material -- and spatial uniformity -- the uniformity …
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TCAD approaches to multidimensional simulation of advanced semiconductor devices
… to the conventional planar MOSFET architecture. TCAD simulation tools are fundamental to the analysis and development of new technology generations. However, the increasing device complexity is reflected in an augmented dimensionality of the problems to be solved. The trade-off between accuracy …
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Modelling and enhancement of the channel mobility of 4H-SiC power MOS devices
… MOSFETs are comprehensively studied using TCAD simulations. Based on these results, it is shown that the channel mobility could be increased significantly by reducing the body width of the transistor to sub-100nm values, thereby effectively yielding a SiC FinFET. The feasibility of applying …
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4H-SiC FinFET devices and modelling
… layer has been comprehensively studied using TCAD simulations. Based on these results, it is demonstrated that electron mobility can be significantly enhanced using the ultra-narrow-body fin concept (the FinFET effect) in device structure design. The feasibility of integrating the fin …
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GaN-based vertical power devices
… by experiments, analytical calculations and TCAD simulations. Variable-range-hopping through threading dislocations was identified as the main off-state leakage mechanism in these devices. The design space of leakage current of vertical GaN devices has been subsequently derived. Thirdly, a …
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Design, Modeling and Analysis of Non-classical Field Effect Transistors
… performed through device physics analysis and TCAD modeling methodology to develop design guidelines utilizing transistor's improved characteristics toward application-specific circuit performance enhancement. Results support proposed device design methodologies that will allow development of …
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Trade-offs between performance and reliability of sub 100-nm RF-CMOS technologies
… It is demonstrated through experimental data and TCAD simulations that floating-body devices have improved RF performance but degraded reliability compared to body-contacted devices. 2) Floating-body effects in a cascode core is studied. Cascode cores are demonstrated to achieve much larger …
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Design And Characterization Of Noveldevices For New Generation Of Electrostaticdischarge (esd) Protection Structures
… of the technology computer aided design (TCAD)-assisted ESD protection design. This method incorporates numerical simulations in different stages of the ESD design process, and thus results in a more predictable and systematic ESD development strategy. Physical models considered in the …
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Modeling and simulation of nano-scale transistor
… current. The model’s results are verified with TCAD simulation for transistors with different structural parameters, material parameters, and biases. High accuracy of the proposed model has been proven in all operating regions. The analytical model shows much higher computational efficiency than …
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MODELLING AND DESIGN OF DIAMOND POWER SEMICONDUCTOR DEVICES
… have been designed by means of finite element simulations and their performance has been assessed against the state-of-the-art diamond FETs. Particular attention is given to the static and dynamic properties of deep dopant levels and their effects in WBG semiconductor-based devices. Moreover, …