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Showing 1 to 2 of 2 for “"TCAD modelling"”.
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Investigation of Threshold Voltage Instability in Normally Off GaN on Si HEMT
… novel measurement techniques and a comprehensive TCAD modelling. This thesis starts by analytically understanding the design parameters across the gate stack which have a significant control on the threshold voltage (VTH). The measurement induced VTH instability is quantified for the first time …
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Modelling and enhancement of the channel mobility of 4H-SiC power MOS devices
… MOSFETs are comprehensively studied using TCAD simulations. Based on these results, it is shown that the channel mobility could be increased significantly by reducing the body width of the transistor to sub-100nm values, thereby effectively yielding a SiC FinFET. The feasibility of applying …