Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 62 for “"TCAD"”.
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TCAD-Informed Surrogate Models of Semiconductor Devices
… fine-grained technology computer-aided design (TCAD) device models using a coarsified grid. The resulting surrogate models are shown to approximate the current-voltage characteristics of the fine-grained models to within a maximum error of 0.1% while using less than one tenth as many …
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Behavioral Modeling of CMOS SPADs Based on TCAD Simulations
… Athena from the Silvaco tools suite to feed a TCAD simulator with an accurate model structure that can include fabrication defects. Extract its key parameters with TCAD simulation of the device, performed with ATLAS, from the Silvaco TCAD tools suite. Combine physical parameters and analytical …
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TCAD approaches to multidimensional simulation of advanced semiconductor devices
… to the conventional planar MOSFET architecture. TCAD simulation tools are fundamental to the analysis and development of new technology generations. However, the increasing device complexity is reflected in an augmented dimensionality of the problems to be solved. The trade-off between accuracy …
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Uncalibrated TCAD methodology for analysis of ESD protection devices
In this work, an uncalibrated TCAD methodology for simulation of electrostatic discharge (ESD) devices is presented. The methodology addresses TCAD setup issues including device construction, boundary conditions, and choosing a physical model and parameters. A major trade-off between computation …
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Design, Modeling and Analysis of Non-classical Field Effect Transistors
… performed through device physics analysis and TCAD modeling methodology to develop design guidelines utilizing transistor's improved characteristics toward application-specific circuit performance enhancement. Results support proposed device design methodologies that will allow development of …
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High-voltage ESD PNP clamp simulation and design
… discharge (ESD) PNPs are studied through TCAD simulation and device measurement. PNPs for three different voltage classes, 16 V, 65 V, and 100 V, in a 0.5-µm Bipolar CMOS DMOS (BCD) technology are used as the context for the study. The PNPs are varied in choices of topology, layout …
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Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology
… areas have been targeted first, including a TCAD-based approach to identify performance-limiting regions in SiGe HBTs, measurement and modeling of carrier transport parameters that are essential for predictive TCAD, and measurement of device-level single-event transients to better understand …
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Investigation of Threshold Voltage Instability in Normally Off GaN on Si HEMT
… novel measurement techniques and a comprehensive TCAD modelling. This thesis starts by analytically understanding the design parameters across the gate stack which have a significant control on the threshold voltage (VTH). The measurement induced VTH instability is quantified for the first time …
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Modeling and simulation of nano-scale transistor
… current. The model’s results are verified with TCAD simulation for transistors with different structural parameters, material parameters, and biases. High accuracy of the proposed model has been proven in all operating regions. The analytical model shows much higher computational efficiency than …
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Ic-Rest(2): A Time-to-Market Driven IC Reliability Statistics Tool
The tool combines TCAD simulation, short-time tests and novel solutions to the SiO2 and Si-SiO2 defect generation rate equations (in time and space) under static and dynamic operation. The predicted failure statistics are best described by the generalized Gamma-distribution (or more accurately the …
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A study of carbon and iron charged point defects in gallium nitride: electronic structure implications for high-power photoconductive solid state switch applications
… tools (e.g., Technology Computer- Aided Design (TCAD)) it is necessary to know a variety of material de- pendent parameters for which experimental results have not been obtained. Therefore, the ability to determine those parameters via ab initio calcula- tions is essential, especially when the …
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High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures
… as Sentaurus technology computer-aided design (TCAD) models, which allow for rapid device development that could not be achieved by manufacturing prototypes due to the cost and time associated with fabrication. These simulations are, though, computationally expensive and typically most design …
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Performance limits of silicon solar cells due to structural defects
… model into technology computer aided design (TCAD) simulations of high-efficiency solar cells are presented. The model and method are validated by comparison to analysis of the material properties and device performance of silicon solar cells containing structural defects. TCAD simulations …
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Modelling of Multichannel GaN Transistors
… the fundamental physical models used in TCAD sentaurus simulations, a widely used tool for simulating and analysing the behaviours and characteristics of semiconductor devices. However, simulating wide bandgap-based devices presents specific challenges that necessitate careful model …
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Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization
… scaling. Technology computer aided design (TCAD) and sophisticated on-wafer DC and RF measurements are essential in this research. Drift-diffusion (DD) theory is used to investigate a novel negative differential resistance (NDR) effect and a collector current kink effect in first-generation …
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Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments
… present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or …
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Development of Low Gain Avalanche Detectors for Astroparticle Physics Experiments in Space
… of the LGADs from 1 mm2 to 1 cm2 is presented. TCAD simulations have been performed to obtain the process parameters for the gain layer to achieve a gain of 100 thought to improve the time resolution for larger channel areas. A batch of 16 wafers has been produced to study the adaptation of …
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Design And Characterization Of Noveldevices For New Generation Of Electrostaticdischarge (esd) Protection Structures
… of the technology computer aided design (TCAD)-assisted ESD protection design. This method incorporates numerical simulations in different stages of the ESD design process, and thus results in a more predictable and systematic ESD development strategy. Physical models considered in the …
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Interplay of Electrical, Mechanical and Thermal Fields in III-N Nanostructures for LED Applications
… (5) integrating the NEMO3-D with commercial TCAD tool Synopsys to determine the terminal electrical and optical characteristics of InGaN/GaN disk-in-a-wire LEDs; and (6) finally to propose optimum device specifications for InGaN/GaN disk-in-a-wire LEDs to achieve maximum Internal Quantum …
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Terahertz imaging arrays for room temperature operation summary of doctoral thesis /
… tunneling microscopy measurements, Synapsys TCAD and FDTD simulations were performed. These results let to supplement the principle of detection mechanism by field-effect caused by surface charge. InGaAs bow-tie detector performance in direct and heterodyne modes was compared. The detector …
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