Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"T-gate"”.
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Aligned T-gate, fabrication using X-ray lithography
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Manufacturable Millimeter-Wave Gallium Arsenide MESFET Integrated Circuit Technology
… ICs. Future plans for low-noise 0.10 $\mu$m T-gate FETs using ion-implantation and electron-beam lithography techniques are also discussed.
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High-Speed Indium Gallium Phosphide/indium Gallium Arsenide/indium Phosphide Doped-Channel HFETs and Implanted Gallium Arsenide Enchancement/depletion-Mode MESFETs Technology With an f(T) Over 130 GHz
… ratio. A simple low-temperature T-gate process using a novel implantation schedule for high-performance direct ion-implanted GaAs enhancement/depletion-mode MESFETs was demonstrated. The 0.12-mum gate-length D-mode MESFET shows an fT of 136 GHz and fmax of 200 GHz. With the same …
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Characterization of reactive ion etching of III-V compound semiconductor materials
… methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for reliable fabrication of uniform short period gratings with smooth etched surfaces and excellent stoichiometry …
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Implementing Quantum Gates With Length-3 Dynamic Graphs
… walks have been shown to implement quantum gates, including the T gate, Hadamard gate, and the Controlled{NOT gate. Since these gates make up a universal set of quantum gates, they can implement any other arbitrary quantum gate up to an arbitrary approximation. This process, however, can be …
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Modelling of advanced submicron gate InGaAs/InAIAs pHEMTS and RTD devices for very high frequency applications
… i.e., very low breakdown voltage and high gate leakage current. These disadvantages degrade device performance, especially in Monolithic Microwave Integrated Circuit (MMIC) low noise amplifiers (LNAs). The optimisation of InAlAs/InGaAs epilayer structures through advanced bandgap …