Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 73 for “"Switching speed"”.
-
Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices
… systematically in this thesis. The static and switching characteristics of the two switches have firstly been characterized to get the basic device information. Specific issues in the respective characterization process have been explored and discussed. Many of the characterization procedures …
-
Applications of Layer-by-Layer Films in Electrochromic Devices and Bending Actuators
This thesis presents work done to improve the switching speed and contrast performance of electrochromic devices. Layer-by-Layer (LbL) assembly was used to deposit thin electrochromic films of materials ranging from organic, inorganic, conducting polymers, etc. The focus was on developing new …
-
Switching Trajectory Control for High Voltage Silicon Carbide Power Devices with Novel Active Gate Drivers
… ideal switch with high dv/dt and di/dt. The fast switching speed of SiC devices introduces challenges for the application since electromagnetic interference (EMI) noise and overshoot voltage can be serious. Also, the insulation should be carefully designed to prevent partial discharge.</p> <p>To …
-
Design of a 350 kW Silicon Carbide Based 3-phase Inverter with Ultra-Low Parasitic Inductance
… including DC link inductance, power module switching losses, and inverter efficiency. The core power electronics will be built around the latest generation of 1200 V half-bridge SiC power modules with an ultra-low inductance dc bus capacitor and laminated bussing, fast switching speed and …
-
Tunneling nanoelectromechanical switches based on compressible self-assembled molecules
… consumption in practical device designs. The low switching speed, poor reliability and absence of scalable manufacturing technique also set barriers to the maturation of NEM switches to complement or substitute semiconductor transistors for applications with energy constraints. To accelerate the …
-
Large-scale neuromorphic computing hardware for analog AI enabled by epitaxial random access memory
… analog computing methods since it features fast switching speed, extremely small cell footprint, low energy consumption for matrix-vector multiplication, capability of both storage and computing, three-dimensionality, and many analog weight steps. Although there have been intensive studies on the …
-
Study of the electromechanic aspects of RF MEM devices with particular emphasis on the dynamic behavior for the case of RF MEM switches and tuneable capacitors
… but they suer from some drawbacks like low switching speed and lack of reliability. In the near future for many applications, like mobile phones and communication systems, reliable switches with higher commutation speed are expected. This thesis is focused on the study of the dynamic …
-
Electron-phonon interactions in double layer graphene superfluids
… far outperform traditional CMOS devices both in switching speed and power efficiency. When examining the possibility of a room-temperature exciton condensate, it is important to consider the scattering of charge carriers by phonons in each of the constituent graphene monolayers. We use the non- …
-
On the use of impact-induced nonlinearities in limit switch design
… such as the cyclic-fold bifurcation, in terms of switching speed and sensitivity.
-
Modeling Compact Non-Volatile Photonic Switching Based on Optical Phase Change Material and Graphene Heater
… efficiency, low absorption loss, and rapid switching speed. Computational simulations demonstrate reversible phase transitions of Sb₂Se₃ facilitating 2 working states with crosstalk (CT) down to -24 dB at 1550 nm wavelength and more than 55 nm 0.3 dB insertion loss (IL)bandwidth. The …
-
Advanced Semiconductor Device and Topology for High Power Current Source Converter
… switch in the CSC. Since the GTO has a lower switching speed and requires a complicated gate driver, the symmetrical GTO based CSC usually has low dynamic response speed and low efficiency. To achieve high power rating, fast dynamic response speed and low harmonics, an advanced semiconductor …
-
Substrate Impurity Incorporation Mitigation for Improved AlGaN/GaN-ON-Si RF Performance
… operation with enhancements to RF switching speed, power, gain, and efficiency.
-
An evaluation of indium antimonide quantum well transistor technology
… great potential to use this new material in high switching speed and low power transistors. In Dec, 2005, Intel and its partner, QinetiQ, Ltd, announced 85nm gate length enhancement and depletion mode InSb quantum well transistors. Such transistors can operate as high as 305GHz and power …
-
Analytical modeling and simulation of bicmos for VLSI circuits
… performance and its superiority over CMOS in the switching speed domain.
-
An analysis of non-utility generation alternatives
… performance and its superiority over CMOS in the switching speed domain.
-
Swept-Frequency Sampled Grating Distributed Bragg Reflector Lasers Optimized for Optical Coherence Tomography Applications
… tuning range while exhibiting a wavelength switching speed that is among the fastest currently available. The SG-DBR laser is used to generate linear frequency ramps with high repetition rates. Since the SG-DBR laser is currently used for the telecommunications industry in high volume, the …
-
High-Performance Gateless Iii-Nitride Microwave Switches
… Transistors (FETs) have low loss, fast switching speed, and simple fabrication process, which allows for simple integration with other components such as power amplifiers, phase shifters, arrays etc. Recent advancements in III-nitride heterostructure field-effect transistors (HFET) have …
-
III-V compound semiconductor selective area epitaxy on silicon substrates
… made of III-V materials to perform at higher switching speed. The integration of III-V semiconductor devices on silicon is the most approachable way that utilizes both the mature manufacturing technology of silicon CMOS circuits and the good electronic properties of III-V material. In …
-
Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress
… conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance degradation when exposed to elevated temperatures and electrical stress over long durations. This study aims to …
-
Spin-orbit torque switching of compensated ferrimagnetic cobalt-terbium alloys
… to be more competitive, further reductions in switching energy and switching speed are needed. Recently, there has been interest in using antiferromagnetically coupled materials instead of ferromagnetic materials to store information. Compared with ferromagnetic materials, antiferromagnetically …
Page 1 of 4