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Showing 1 to 20 of 126 for “"Surface states"”.
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Dynamics and manipulation of surface states
The properties of two-dimensional (2D) electronic states located at the surface of the (111) faces of the noble metals Ag, Cu, andAu as well as 2D overlayer states of single atom layer Sodium films on Cu(111) have been investigated using scanning tunnelingspectroscopy (STS). All measurements were …
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Surface states on the cleaved (III) silicon surface
… edge and the Fermi level in the bulk and at the surface, and to the quantity of charge in the surface states which has been trapped from the bulk. Analysis of the data shows a high density of surface states on the clean cleaved surface, centered 0.28 ± 0.08 eV above the valence band edge. The …
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A photoelectric investigation of surface states on insulators
Thesis (Ph.D.) Massachusetts Institute of Technology. Dept. of Physics, 1953.
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Thin Oxide MOS Capacitor Studies of Fast Surface States
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-07-07T20:53:31Z No. of bitstreams: 1 1971_hunter.pdf: 3687418 bytes, checksum: 4c2047e94e889148dd27584ccd2621a8 (MD5)
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Spin polarization, circular dichroism, and robustness of topological surface states
Dreidimensionale topologische Isolatoren sind ein neues Materialsystem, welches dadurch charakterisiert ist, dass es in seinem Inneren isolierend an der Ober äche jedoch leitend ist. Ursächlich für die Leitfähigkeit an der Ober äche sind sogenannte topologische Ober- ächenzustände, welche das …
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An Investigation of the Surface States on N-Type Germanium
Made available in DSpace on 2014-12-04T21:03:00Z (GMT). No. of bitstreams: 1 5801737.pdf: 2964299 bytes, checksum: 7d733c75ec8e0e8fd5ce6f650a297430 (MD5) Previous issue date: 1958
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Thin Oxide Metal-Oxide - Semiconductor Capacitor Studies of Fast Surface States
Made available in DSpace on 2015-05-12T22:38:46Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7212221.PDF: 2511309 bytes, checksum: d384075a57e8f67cba6284709e4a102b (MD5) Previous issue date: 1971
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The determination of semiconductor band gap structure and surface states using tunneling spectroscopy.
Massachusetts Institute of Technology. Dept. of Electrical Engineering. Thesis. 1971. Ph.D.
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Investigation of Surface States in Gallium Nitride Devices using a New High Frequency Measurement Technique
Surface states place a limitation on the high-frequency behavior of Gallium Nitride devices by causing RF dispersion. They are also a source of undesirable 1⁄f noise. This thesis specifically aims to explore techniques to address known experimental observations of dispersion phenomena of unknown …
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Topological Insulators Interfaced with Trivial and Ferromagnetic Insulators. Selective contact and patterning of surface states.
… are a novel class of material which host helical surface states with exciting and unique electronic properties. They can provide insights into new physics and also pave the way for potential spintronic applications. Much work has been done to identify and characterise these surface states, but …
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Investigation of Surface States and Device Surface Charging in Nitride Materials Using Scanning Kelvin Probe Microscopy
… Probe Microscopy (SKPM) was used to characterize surface states and device surface charging in nitride materials. Samples grown by Molecular Beam Epitaxy (MBE), Metal Organic Chemical Vapor Deposition (MOCVD) and Hydride Vapor Phase Epitaxy (HVPE) typically show a high surface band bending of …
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Boundaries, disorder and noise in quantum-coherent systems
… and classical noise. First, we consider surface states in Dirac materials. We show that these systems can host ballistically propagating modes that are immune, to a large extent, to disorder at boundaries. Furthermore, in contrast to the conventional Tamm-Shockley states, Dirac surface …
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Examining Topological Insulators and Topological Semimetals Using First Principles Calculations
… qualities and useful topologically protected surface states of topological insulators and semimetals. Topological materials have protected qualities which are not removed by weak perturbations. The manifestations of these qualities in topological insulators are spin-momentum-locked surface …
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Novel Phenomena Induced by Magnon-Magnon and Magnon-Spin Coupling
… proposed for generating topological magnonic surface states, they usually require materials with either special crystal symmetries or artificially modulated structures that demand advanced nanofabrication techniques, both of which bring in inevitable difficulties in experiments. In this …
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An SEGF study of the Rh(001) surface.
… study of Rh(001) has been performed using the surface embedded Green function method. Calculations have been performed by embedding a three-layer slab onto a bulk rhodium substrate. The calculated work function and surface core level shifts are in good agreement with other theoretical work. …
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Epitaxial growth and plasmonic coupling in topological insulator heterostructures
… insulators that exhibit helical superconducting surface states and insulating bulk states. Electrons occupying these surface states are two-dimensional (2D) massless, linear dispersed, and spin-momentum locked Dirac Fermions. The optical transitions among these surface states, for example Dirac …
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Electronic excited states in quasi- one- dimensional organic solids with strong coupling of Frenkel and charge-transfer excitons
… to predict and comprehend the electronic excited states in regular aggregates formed of quasi-one-dimensional organic materials. The tight face-to-face stacking of the molecules justifies the idealization of the crystals and clusters as weakly interacting stacks with leading effects taking place …
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Charge Transfer Dynamics in Cadmium Chalcogenide Quantum Dots based Heterostructures
… devices. Compared to the bulk semiconductors, surface of QDs significantly affects the optoelectronic properties of QDs due to high surface to volume ratios. The difference in the chemical environment of the surface atoms with that of bulk results in mid-gap states which can trap photoexcited …
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Contact-free Electrical Characterisation of Novel Materials Using Terahertz Spectroscopy
… detrimental non-radiative pathways, either via surface states or oxidation or defects, that significantly degrades the optoelectronic properties of indium arsenide (InAs), indium arsenide phosphide (InAsP) and tin-based halide perovskites were extensively studied using terahertz spectroscopy. An …
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Spin States in Bismuth and Its Surfaces: Hyperfine Interaction
… spin-orbit interaction in its two-dimensional surface states due to the broken spatial inversion symmetry. In this dissertation we experimentally explore the carrier spin polarization due to transport under strong spin-orbit interaction and the nuclear polarization resulting from the relatively …
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