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Showing 1 to 3 of 3 for “"Surface Photovoltage Spectroscopy"”.

  1. Photon-assisted spectroscopy of electronic interface states in perovskite oxide heterostructures

    … properties by two different photoassisted spectroscopy techniques: surface photovoltage spectroscopy and photoelectron spectroscopy. This work especially deals with perovskite oxides, namely with the model perovskite strontium titanate (SrTiO3) as a substrate and three differently doped …

    qucosa-diss

  2. Process Dependence of Defects and Dopants in Wide Band Gap Semiconductor and Oxides

    … has higher k value, combined X-ray absorption spectroscopy (XAS) and depth-resolved cathodoluminescence spectroscopy (DRCLS) measurements identified the defects in Ge doped HfO<sub>2</sub>. Besides, DRCLS of GeO<sub>2</sub>/Ge structure demonstrated that different annealing temperature will …

    ohiolink Repository record for Process Dependence of Defects and Dopants in Wide Band Gap Semiconductor and Oxides (opens in a new tab)

  3. THE ROLE OF NATIVE POINT DEFECTS AND SURFACE CHEMICAL REACTIONS IN THE FORMATION OF SCHOTTKY BARRIERS AND HIGH N-TYPE DOPING IN ZINC OXIDE

    … work explores the electronic properties of ZnO surfaces and interfaces and the impact of native point defects on Schottky barrier formation and doping.</p><p>The results presented here use a complement of depth-resolved cathodoluminescence spectroscopy (DRCLS), atomic force microscopy (AFM), …

    ohiolink Repository record for THE ROLE OF NATIVE POINT DEFECTS AND SURFACE CHEMICAL REACTIONS IN THE FORMATION OF SCHOTTKY BARRIERS AND HIGH N-TYPE DOPING IN ZINC OXIDE (opens in a new tab)