Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 9 of 9 for “"Superjunction"”.
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Theory of Superjunction Devices
… by Fujihira in 1997 and the first commercial superjunction MOSFET by Infineon technology in 1998, the technology and the understanding of superjunction devices have been gradually progressed. Although Fujihira’s ideal model was developed to estimate the specific on-state resistance at a given …
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Design and Modelling of Smart Power IC Components For the Automotive Industry
… employing the Reduced Surface Field (RESURF) and Superjunction (SJ) concept to yield high breakdown voltage with low specific on-state resistance. For n-type devices, four different structures were analysed. They are XtreMOSTM (Trademark of AMI, for the rest of the thesis, XtreMOS is used), …
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High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures
… a new RC-IGBT concept, the ‘Dual Implant SuperJunction (SJ) RC-IGBT’ that addresses these concerns and is manufacturable using current state of the art techniques. The concept and proposed manufacturing method enables, for the first time, a full SuperJunction structure to be achieved in a …
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Development of vertical bulk gallium nitride power devices
… devices. The final topic covered is GaN superjunction (SJ) technology in the context vertical power FinFETs. The SJ FinFET concept is first introduced then an underutilized method for p-type doping GaN is explored as an alternative to conventional p-type regrowth and ion implantation. …
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Modelling of Multichannel GaN Transistors
… generation within GaN-based doped multichannel superjunction (SJ) structures. The simulations reveal sequential depletion in doped structures and simultaneous depletion in undoped structures. Results from this model demonstrate that increasing the number of channels in multichannel structures …
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Novel Structures for Scalable Vertical Gallium Nitride Power Devices
… unipolar limit of GaN through devices known as superjunction. The theory that has been highly successful for Si devices is applied to GaN, and a new framework for designing devices is presented. Using our approach to creating vertical fin-based devices, we are able to fabricate record high …
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Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization
… scaling are examined. Subsequently, a novel superjunction collector design is proposed for higher breakdown voltages. Hydrodynamic models are used for the TCAD studies that complete this part of the work. Finally, Monte Carlo simulations are explored in the analysis of aggressively-scaled …
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Power Converter and Control Design for High-Efficiency Electrolyte-Free Microinverters
… is presented. It has the ability to use modern superjunction MOSFETs in conjunction with zero-reverse-recovery silicon carbide (SiC) diodes to achieve ultrahigh efficiency. The performance of the topology was experimentally verified with a tested CEC efficiency of 98.6%. Due to the relatively …
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Junction Based Gallium Nitride Power Devices
… of the p-NiO/n-GaN junction in vertical superjunction (SJ) devices. We show the design and simulation of this heterojunction structure in a SJ and confirm the uniform electric field and high breakdown voltage under the charge balance. Then the device fabrication is presented in detail, …