Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 24 for “"Subthreshold Swing"”.
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Superlattice-source nanowire FET with steep Subthreshold characteristics
The non-scalable room temperature 60 mV/dec subthreshold swing of a conventional MOSFET is a fundamental limit to the continuation of transistor power scaling. In order to further reduce transistor power consumption and transistor footprint, new subthreshold transport mechanisms other than …
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Silicon on Ferroelectric Insulator Field Effect Transistor (SOFFET): A Radical Alternative to Overcome the Thermionic Limit
… due to excessive leakage, mainly due to subthreshold conduction. Over the years, planar MOSFET dimensional reduction was the only process followed by the semiconductor industry to improve device performance and to reduce the power supply. Further scaling increases short-channel-effect …
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Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics
… are believed to be responsible for the large subthreshold swing and low drain current on/off ratio. A passivation-last process followed by post-metallization annealing is then utilized, which largely reduces the reverse biased Schottky-gate leakage current and OFF-state drain current, leading …
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Interfaces between two-dimensional transition metal dichalcogenide semiconductors and oxide dielectrics for transistors
… – resulting in variable threshold voltages, high subthreshold swing values, and low ON-state currents in FETs. A method to deposit MoS₂ on different substrates without interfacial residue was developed. This allowed the study of the van der Waal interface between the 2D TMDs and dielectric …
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Tunneling Field-Effect Transistors for Low Power Logic: Design, Simulation and Technology Demonstration
… device candidate to overcome the 60 mV/decade subthreshold swing (S) limitation of the conventional metal-oxide-semiconductor field-effect transistor (MOSFET). TFET exploits gate modulated band-to-band tunneling (BTBT) to achieve a steep S and a high on-state current Ion to off-state current …
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Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic
… compound semiconductors for n-MOSFETs and steep subthreshold swing devices such as tunnel field effect transistors (TFETs). This work evaluates both approaches utilizing germanium (Ge) and strained-Ge as a material to understand the benefits and drawbacks to both approaches. Hypothetically, high …
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The Electrical Transport Study Of Graphene Nanoribbons And 2d Materials Beyond Graphene
… device characteristics such as a near ideal subthreshold swing and an on/off ratio of 106 as a result of the strong gate-channel coupling. In addition, the ambipolar field-effect transistors of atomically thin MoS2 with an ionic liquid gate were realized in this study. A record high On-Off …
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Tip-based nanolithography and application to molybdenum disulfide devices
… properties (mobility, on/off ratio and subthreshold swing) of MoS2 field-effect transistors (FETs) degrade after nanoribbon formation, while atomic layer deposition passivation improves mobility and on/off ratio but degrades subthreshold swing. One 30-nm-wide monolayer FET achieved a …
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Ultra-scaled III-V Vertical Tunneling Transistors
… that a combined high tunneling current and steep subthreshold swing is indeed achievable. Finally, we discuss opportunities and challenges of all-III-V complementary TFET logic. The findings in this thesis demonstrate a potential technology platform for future ultra-low-power digital electronics.
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Expansibility Evaluation of a Two-dimensional Access Array for Quantum Computing
… transport parameters, such as threshold voltage, subthreshold swing, and drain induced barrier lowering. Additionally, I report Coulomb oscillations and the formation of quantum dots in 40 nm commercially-available MOSFET devices. I benchmark those against a finFET of the same dimensions, designed …
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Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs
… Following FGA, the devices exhibited a subthreshold swing (SS) of 150mV/dec., an ION/IOFF of 104 and the transconductance, drive current and peak effective mobility increased by 29%, 25% and 15%, respectively. An alternative technique, based on the fitting of the measured full-gate …
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InGaAs/GaAsSb type-Il heterojunction vertical tunnel-FETs
… its limit due to the physical limit of 60 mV/dec subthreshold swing (SS) at room temperature and the requirement for controlled leakage current. In order to continue VDD scaling for low power applications, novel device structures with steep SS have been proposed. Tunnel-FETs (TFETs) are among the …
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GaN Complementary-Metal-Oxide-Semiconductor (CMOS) Technology
… in terms of on-current density, on-off ratio, subthreshold swing and on-resistance. This thesis for the first time demonstrates a GaN-CMOS technology on a 6-inch GaN-on-Si wafer by fabricating a monolithically integrated p-channel GaN transistor with an E-mode GaN n-channel device.
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Material deposition and laser annealing of metal oxide thin films for electronics fabricated at low temperature
… of 5x105, a turn on voltage of -0.15 V, and a subthreshold swing S of 0.28 V/decade. Upon ELA, AZO showed a resistivity reduction which is shown to result from increasing both the free electron density and mobility. When the optimised as-deposited AZO, 180 nm thick deposited at 180 W and 2 …
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ASIC Implementation Methodology and Design Challenges in 16nm
… behavior, drain-induced barrier lowering (DIBL), subthreshold swing, leakage current, drive current, temperature dependence, and capacitance characteristics for both standard-threshold and low-threshold device variants. The analysis demonstrates the tradeoffs between performance and leakage that …
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Physical Modeling of Graphene Nanoribbon Field Effect Transistor Using Non-Equilibrium Green Function Approach for Integrated Circuit Design
… off-current, larger ION/IOFF ratio, smaller subthreshold swing and smaller drain-induced barrier-lowering. The wider armchair GNRs allow the scaling of channel length and supply voltage resulting in better on-state performance such as higher drive current, smaller intrinsic gate-delay time …
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Development of High-performance Flexible Poly-Si Thin Film Transistors and GaAs PIN Photodiode for Advanced X-ray Imaging
… (VTH) of 2.9 V, an ION/IOFF close to 105, and a subthreshold swing (SS) of 890 mV/dec. Flexible GaAs photodiode was achieved by using a novel water-assisted epitaxial liftoff (H2O-ELO) technology. The heteroepitaxial growth of GaAs by metal organic chemical vapor deposition (MOCVD) is conducted …
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InGaAs/GaAsSb quantum-well Tunnel-FETs for ultra-low power applications
… thermal currents manifests itself in degraded subthreshold swing (SS) of 140 mV/dec, as well as strongly temperature dependent SS from 300 K to 77 K. The second generation QWTFETs with sub-nm InP cap between gate oxide and InGaAs channel and revised structure design has demonstrated improved SS …
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Polarization-induced transport in ferroelelctric organic field-effect transistors
… of small-molecule-based organic FETs. The subthreshold swing and other transistor parameters in organic FETs can be controlled in a reversible fashion by switching the polarization direction in the PVDF-TrFE layer. We further demonstrate a novel method of selective poling of the dielectric …
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Ultra Low Power SubThreshold Device Design Using New Ion Implantation Profile
… circuit operates at higher supply voltage. Subthreshold circuit operates at lower supply voltage and these kind of effects will not be a serious issue. Since subthreshold circuit will operate at much lower supply voltage then devices for subthreshold circuit does not require halo and …
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