Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 9 of 9 for “"Strained-layer superlattice"”.
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Defect investigations in InAs/GaSb type-II strained layer superlattice
InAs/GaSb type-II strained layer superlattices are a material used for infrared detection. By adjusting the thickness of the InAs and GaSb layers, the material bandgap can be tuned to absorb photons from 3-30 um. Compared to competing materials such as HgCdTe and InSb, InAs/GaSb superlattices are …
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Unipolar barrier strained layer superlattice infrared photodiodes : physics and barrier engineering
Type-II InAs/GaSb Strained Layer Superlattice (T2SL) is an emerging technology for infrared detection. They are being seen as a threat to 50 years old incumbent technology based on Mercury-Cadmium-Telluride (MCT) system. T2SL have been theoretically predicted to outperform MCTs. This dissertation …
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Characterization of, and novel architectures for, strained-layer superlattice infrared photodetectors
… class of materials, the III-V type-II superlattices (T2SLs), have been actively studied due to several potential and predicted advantages over MCT. T2SLs offer an easier path to the design of arbitrarily small effective bandgaps by controlling the layer thickness, more uniform material …
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Characterization of III-V compound semiconductor heterostructures grown by metalorganic chemical vapor deposition
… to produce high quality samples with uniform layer thickness, no defects, and abrupt interfaces. For this metalorganic chemical vapor deposition (MOCVD) is one of the most important growth methods. In this study, transmission electron microscopy (TEM) was used for the characterization of …
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Hydrogen in niobium-tantalum superlattices
Hydrogen has been dissolved in Nb/Ta superlattices for which the structural and thermodynamic properties of this new H-metal system were studied, in situ, by x-ray diffraction. It is found that H induces a strain modulation exhibiting a Curie-Weiss type temperature dependence, thus, providing a …
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InAs/Ga(In)Sb superlattice based infrared detectors using nBn design
… operating at higher temperatures. InAs/GaSb strained layer superlattice (SLS) photodectors are now considered as a promising technology for both MWIR and LWIR wavelength ranges. The bandgap of the SLS can be adjusted by controlling the thickness of the constituent InAs and GaSb layers during …
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Characterisation and simulation of InAs/InAsSb structures for mid-infrared LEDs
… gas sensing applications. InAs/InAsSb strained – layer superlattice (SLS) and multiple quantum well (MQW) structures of low antimony content (Sb = 3.7 – 13.5 %) grown by MBE on InAs substrates were compared. These structures were characterised by XRD and TEM imaging. Band structure …
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Investigation of InAs/GaSb superlattice based nBn detectors and focal plane arrays
… and cost of a infrared system. The InAs/Ga(In)Sb strained layer superlattice (SLS) material system proposed for the IR detection in 1987, has been considered in recent years as an interesting alternative to the present day IR detection technologies. InAs/GaSb SLS has a type II band alignment such …
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Novel etch studies and passivation techniques on InAs/GaSb superlattice based infrared detectors
… and cost. Type-II band aligned InAs/Ga(In)Sb strained layer superlattice (SLS) material system proposed for the IR detection in the 1970s has been considered in recent years as an interesting alternative to the present day IR detection technologies. Type-II SLS technology possesses mature …