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Showing 1 to 8 of 8 for “"Sticking coefficient"”.
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Time resolved measurements of droplet growth in a Wilson cloud chamber
… of published work. Two of the theories used the sticking coefficient alone as a parameter, while the third used both sticking and thermal accommodation coefficients. No interpretation of the numerical value of the sticking coefficient could be made. In the theory invoking sticking and thermal …
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A theoretical study of surface kinetic processes in the Mbe growth of compound semiconductors
… performed for various growth conditions. The sticking coefficient decreases with T due to surface segregation aided evaporation of In at higher temperature. The surface segregation of In occurs due to a strong repulsive interaction between In and the host lattice. The time and growth rate …
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Simulation of muon-catalysed fusion experiments
… simulation of experiments to measure alpha-muon sticking in muon catalysed deuterium-tritium fusion. The experiments simulated are those which measure the ratio of αμ to α from fusion in a low density gas target by detecting collinear alpha-neutron coincidences and relying on the differing …
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Study of plasma-surface kinetics and feature profile simulation of poly-silicon etching in Cl²/HBr plasma
… neutral-to-ion flux ratio were measured and the sticking coefficients are derived for reactive neutrals for Cl2 and HBr. The sticking coefficient for HBr system is lower probably due to the relatively larger size of bromine atom compared with chlorine and its relatively lower chemical reactivity. …
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MBE growth and investigation of (001) GaAs surfaces using SIMS
… regime may be important, and of a higher initial sticking coefficient on the (4 x 6) Ga stabilised surface, but the results are not easily interpretable. A tentative deduction is that after initial adsorption, possibly at defect sites, the oxide is formed by a process of nucleation and growth, …
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Hydrogen surface wave plasma cleaning of the EUV collector
… was conducted. In addition, a reactive ion sticking coefficient was empirically fit to the validation experiment data and used to predict etch rates. The experiment and simulation are compared with discrepancies identified and explained. Finally, simulations were carried to determine whether …
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In Situ Enrichment and Epitaxial Growth of 28Si Films via Ion Beam Deposition
… energy of Ec = 1.1(1) eV for the reactive sticking coefficient of SiH4.
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Continuum supersonic gas jet enhanced focused electron beam induced deposition
… – either decreasing the temperature to increase sticking and prevent desorption, or increasing the temperature to increase surface diffusion (continuum jet induced 10x increase in surface diffusion) and deposition purity (heated continuum jet resulted in 95% as deposited tungsten purity). In …