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Showing 1 to 11 of 11 for “"Sticking Probability"”.
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Ultracold surface collisions : sticking probability of atomic hydrogen on a superfluid 4He
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1993.
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Experimental Investigation of Microparticle Sand Sticking Probability from 1000°C to 1100°C
… independent variables, culminating with a final sticking probability (SP) model. Overall, the SP of individual ARD particulate is a primary function of flow-particle temperature and normal impact momentum. Tangential impact momentum of a particle will decrease the SP, while surface temperatures …
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Control of Reaction Surface in Low Temperature CVD to Enhance Nucleation and Conformal Coverage
… it is required that the precursor has a high sticking probability on the substrate, whereas, for conformal deposition, the sticking probability of the precursor molecule on the growth surface has to be lower. Therefore, to achieve both of these characteristics, it is imperative to control the …
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Modeling real world phenomena using molecular dynamics and continuum simulations
… from the HOPG surface. It was observed that the sticking probability of ice-like argon aggregate is higher than that of the amorphous SiO 2 aggregate when incident on the HOPG surface. The sticking probability of SiO 2 is significantly higher than that of the ice-like argon aggregate at 1.5 km/s …
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Silicon Carbon(001) Gas-Source Molecular Beam Epitaxy From Methyl Silane and Silicon Hydride: The Effects of Carbon Incorporation and Surface Segregation on Growth Kinetics
… C backbonds. This, in turn, decreases the Si2H6 sticking probability and, hence, the sublayer deposition rate. This continues until a critical C coverage is reached allowing the nucleation and growth of a C-rich sublayer until the excess C is depleted. At this point, the self-organized bilayer …
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Growth of silicon(1-x) germanium(x) from disilane and digermane by gas-source molecular beam epitaxy
… eV, respectively. The zero-coverage reactive sticking probability in the impingement-flux-limited growth regime was found to be 0.036 and 0.052 for $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6,$ respectively. The growth rate of SiGe alloys R$\sb{\rm SiGe}$ as a function of the bulk Ge content x was …
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Photoinitiated chemical vapor depostion [sic] : mechanism and applications
… model is developed in order to quantify the sticking probability of the initiating radical. Mechanistic insight from these experiments is used to predict the conformality based on the fractional saturation of the monomer vapor.
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B-incorporation kinetics and charge transport property of silicon germanide(001) layer grown by GS-MBE from silicon hydride, germanium hydride, and boron hydride
… eV, respectively. The zero-coverage reactive sticking probability of $\rm Si\sb2H\sb6$ on Si(001)2 x 1 ($\rm Ge\sb2H\sb6$ on Ge(001)2 x 1) in the impingement-flux-limited growth regime was found to be $\rm S\sbsp{Si\sb2H\sb6}{Si} = 0.036\ (S\sbsp{Ge\sb2H\sb6}{Ge} = 0.052).$ The growth rate of …
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Coating and filling of nanometer-scale structures using chemical vapor deposition
… within the trench, as a function of the surface sticking probability. The model predicts the fraction of the total incident flux that must be forward-directed in order to afford seam-free filling as a function of the sticking probability and the starting AR. Experimentally, I find that the …
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On the relevance of adhesion : applications to Saturn's rings
… a coagulation equation, including a restricted sticking probability is derived. The otherwise phenomenological Smoluchowski equation is reproduced from basic principles and denotes a limit case to the derived coagulation equation. Qualitative and quantitative analysis of the relevance of …
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Diamond seeding process for the heterogenous integration of high quality diamond on semiconductors
… applications. Due to high surface energy and low sticking probability of diamond, it is difficult to grow thick coalesced diamond films on non-diamond substrates. To deposit diamond film with acceptable surface roughness, desired grain size, and other properties, nucleation enhancement steps …