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ESD robustness of stacked NMOS transistors for high-voltage tolerant output drivers in FinFET technology

Guo, YuanqiUniversity of Illinois Urbana-Champaign2025

Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2027-05-01

uiuc Repository record for ESD robustness of stacked NMOS transistors for high-voltage tolerant output drivers in FinFET technology (opens in a new tab)