Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 18 of 18 for “"Single Electron Transistor"”.
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The Kondo effect in a single-electron transistor
… and measured a system which behaves as a single "artificial" impurity in a metal, displaying the Kondo effect. This so-called Single-Electron Transistor (SET) has several advantages over the classic bulk Kondo systems. Most obviously, only one impurity is involved, so there is no need to …
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The aluminum single-electron transistor for ultrasensitive electrometry of semiconductor quantum-confined systems
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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Conductance of single-electron devices from imaginary-time path integrals
… study two nanoscopic systems -- the metallic <br>single electron transistor and semiconductor quantum dots -- which <br>are important models for research on molecular electronics and <br>quantum computing. Our theoretical description is based on a <br>path-integral expression for the current …
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Magnetically controlled chemical potential in field effect devices
… and spin-orbit coupled materials. An aluminium single electron transistor (SET) lithographically fabricated on top of a magnetic gate is used to characterise the chemical potential anisotropy of Ga0 .97Mno. 03As and Gao.941\1no.o6As. The conductance variation of the SET provides a direct probe …
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Digital to Analog Converter Design using Single Electron Transistors
… any will become a legitimate successor to CMOS. Single electron tunneling is a process by which electrons can be trans- ported (tunnel) across a thin insulating surface. A conducting island sepa rated by a pair of quantum tunnel junctions creates a Single Electron Transistor (SET). SETs exhibit …
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Charge polarisation and excited state energy level structure of silicon isolated double quantum dots
… Double Quantum Dots (IDQDs) with integrated Single Electron Transistor (SET) for charge sensing. The structures are fabricated with post oxidation island diameters of between 80 and 125nm on the same chip by means of electron beam lithography and reactive ion etching to give trench isolation. …
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Technologies for Scaling Silicon-MOS Quantum Processors
… material stacks showing high-performance single- and two-qubit gates, the focus turns to how to scale-up these technologies. In this thesis, three advancements are presented in-depth for the scale-up of Silicon-MOS based quantum dot devices for quantum computation. Firstly, a passive …
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Magnetoconductance and Dynamic Phenomena in Single-Electron Transistors
<p>The quantum mechanical nature of electrons at very low temperatures has posed interesting results in the resistivity of metals over the last century. When the temperature nears absolute zero, the resistivity due to electron-electron interactions and electron-phonon interactions become very small …
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Novel radio frequency applications and automated characterisation of silicon quantum dots
… controlling and reading every qubit, classical electronics must be as close to the quantum processor as possible to necessitate active feedback. Silicon quantum dots (QDs) are a promising candidate for quantum computation due to their scalability and co-integration with classical electronics. …
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Graphics Processing Unit-Accelerated Numerical Simulations and Theoretical Study of Qubit Dynamics in Realistic Systems
… model and simulate transport through a single electron transistor (SET) device. It is shown that a single donor structure can reliably be engineered from doped quantum dots by taking advantage of the tunability of the electron tunneling rates as well as the interplay, at low …
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Design and implementation of parity error detection in donor qubits in silicon
… spins in these multi-donor dots impact the electron spin resonance (ESR) spectra observed and how this will affect the operation of the parity measurement. Using electrostatic simulations of the different device geometries we show that either a 1P-2P-1P or 1P-3P-1P configuration of donors in …
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Parallel Fabrication and Transport Properties of Carbon Nanotube Single Electron Transistors
Single electron transistors (SET) have attracted significant attention as a potential building block for post CMOS nanoelectronic devices. However, lack of reproducible and parallel fabrication approach and room temperature operation are the two major bottlenecks for practical realization of SET …
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Exploring Isolated Double-Quantum-Dot Detectors for Scalable Quantum Computing Architectures
… this device by reconfiguring the structure as a single-electron box (SEB) detector and as various double-quantum-dot (DQD) detector configurations. In all cases, we demonstrate a high fidelity fast readout exceeding 99.8% in 10µs. Finally, we discuss the ability for the DQD detector to exceed the …