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Showing 1 to 20 of 52 for “"Silicon on Insulator (SOI)"”.

  1. Extreme-submicrometer silicon-on-insulator (SOI) MOSFETs

    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.

    mit Repository record for Extreme-submicrometer silicon-on-insulator (SOI) MOSFETs (opens in a new tab)

  2. Design, process, and reliability considerations in silicon-on-insulator (SOI) MOSFETs

    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.

    mit Repository record for Design, process, and reliability considerations in silicon-on-insulator (SOI) MOSFETs (opens in a new tab)

  3. One-dimensional photonic crystal / photonic wire cavities based on silicon-on-insulator (SOI)

    … optical processing for many telecommunications applications, as well as other applications of high performance optoelectronics. The combination of one-dimensional photonic crystal structures (PhC) and narrow photonic wire (PhW) waveguides in high refractive-index contrast materials such as …

    glasgow Repository record for One-dimensional photonic crystal / photonic wire cavities based on silicon-on-insulator (SOI) (opens in a new tab)

  4. Characterization of Dopant Diffusion in Bulk and lower dimensional Silicon Structures

    The semiconductor industry scaling has mainly been driven by Moore's law, which states that the number of transistors on a single chip should double every year and a half to two years. Beyond 2011, when the channel length of the Metal Oxide Field effect transistor (MOSFET) approaches 16 nm, the …

    vt Repository record for Characterization of Dopant Diffusion in Bulk and lower dimensional Silicon Structures (opens in a new tab)

  5. Novel polarization-diversity devices on a silicon-on-insulator platform.

    Silicon photonics built on a silicon-on-insulator (SOI) platform has received much attention in recent years due to its compatibility with complementary metal-oxide-semiconductor (CMOS) technology, which makes the mass production of photonics devices cost-effective. The intrinsic high-index …

    nus Repository record for Novel polarization-diversity devices on a silicon-on-insulator platform. (opens in a new tab)

  6. Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments

    Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of …

    gatech Repository record for Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments (opens in a new tab)

  7. An investigation of optical properties in active and passive nanophotonic devices

    This thesis describes the simulation and experiment work of nanostructure design for active and passive nanophotonics devices. <br/><br/>The active device part focuses on organic light-emitting diodes (OLEDs), widely used new-generation display devices. The attention is concentrated on improving …

    southwales Repository record for An investigation of optical properties in active and passive nanophotonic devices (opens in a new tab)

  8. Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator

    The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device architectures, such as ultra-thin body or multiple-gate structures, offers the promise of maximizing current drive while maintaining the electrostatic control required for aggressive …

    mit Repository record for Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator (opens in a new tab)

  9. Design and fabrication of an RF power LDMOSFET on SOI

    This thesis studied thin-film Silicon-on-Insulator (SOI) LDMOSFET technology for RF power amplifier applications. To conduct this study, two generations of SOI RF power devices for portable wireless systems were designed and fabricated. Bulk silicon LDMOSFETs were also made and used as a bench-mark …

    mit Repository record for Design and fabrication of an RF power LDMOSFET on SOI (opens in a new tab)

  10. Asynchronous Circuit Stacking for Simplified Power Management

    <p>As digital integrated circuits (ICs) continue to increase in complexity, new challenges arise for designers. Complex ICs are often designed by incorporating multiple power domains therefore requiring multiple voltage converters to produce the corresponding supply voltages. These converters not …

    arkansas Repository record for Asynchronous Circuit Stacking for Simplified Power Management (opens in a new tab)

  11. Linear and non linear coupling effects in sequence of microresonators

    … devices for signal routing in optical networks on chip. Several type of optical microresonators, both in a single and coupled configuration (CROW, SCISSOR), are discussed starting from the fundamental theory till dealing with novel configurations. The coupling between a Mach-Zehnder …

    trento Repository record for Linear and non linear coupling effects in sequence of microresonators (opens in a new tab)

  12. Fabrication of a nanoporous membrane device for high heat flux evaporative cooling

    … membrane for ultra-high heat flux dissipation from high performance integrated circuits. The biporous evaporation device utilizes thermally-connected, mechanically-supported, high capillarity membranes that maximize thin film evaporation and high permeability liquid supply channels that …

    mit Repository record for Fabrication of a nanoporous membrane device for high heat flux evaporative cooling (opens in a new tab)

  13. Design of millimetre-wave input-reflectionless amplifiers in 45nm CMOS-SOI Technology

    … design allows it to attain an input-reflectionless behavior at not only the passband but also the stopband. For proof-of-concept, three input-reflectionless amplifiers are designed and implemented using 45-nm silicon-on-insulator (SOI) CMOS technology. The first design is a single-stage …

    uts Repository record for Design of millimetre-wave input-reflectionless amplifiers in 45nm CMOS-SOI Technology (opens in a new tab)

  14. Design of a MEMS-based optical accelerometer with large measurable range and high sensitivity

    … are broadly used in the area of vibration sensor. Their applications range from seismic disturbances, to automotive industry such as airbag systems, active suspension, and smart braking. Traditionally, the acceleration is detected electrically by measuring either capacitive variations or …

    ubc Repository record for Design of a MEMS-based optical accelerometer with large measurable range and high sensitivity (opens in a new tab)

  15. A high-speed, low-power analog-to-digital converter in fully depleted silicon-on-insulator technology

    This thesis demonstrates a one-volt, high-speed, ultra-low-power, six-bit flash analog-to-digital converter fabricated in a fully depleted silicon-on-insulator CMOS technology. Silicon-on-insulator CMOS technology provides a number of benefits for low-power low-voltage analog design. The full …

    mit Repository record for A high-speed, low-power analog-to-digital converter in fully depleted silicon-on-insulator technology (opens in a new tab)

  16. A Novel Process for GeSi Thin Film Synthesis

    … process of fabricating a strained layer GexSi1-x on insulator is demonstrated. Such strained heterostructures are useful in the fabrication of high-mobility transistors. This technique incorporates well-established silicon processing technology e.g., ion implantation and thermal oxidation. A …

    unt Repository record for A Novel Process for GeSi Thin Film Synthesis (opens in a new tab)

  17. The Development and Packaging of a High-Density, Three-Phase, Silicon Carbide (SiC) Motor Drive

    <p>Technology advances within the power electronics field are resulting in systems characterized by higher operating efficiencies, reduced footprint, minimal form factor, and decreasing mass. In particular, these attributes and characteristics are being inserted into numerous consumer applications, …

    arkansas Repository record for The Development and Packaging of a High-Density, Three-Phase, Silicon Carbide (SiC) Motor Drive (opens in a new tab)

  18. Device integration for silicon microphotonic platforms

    Silicon ULSI compatible, high index contrast waveguides and devices provide high density integration for optical networking and on-chip optical interconnects. Four such waveguide systems were fabricated and analyzed: crystalline silicon-on-insulator (SOI) strip, polycrystalline silicon (polySi) …

    mit Repository record for Device integration for silicon microphotonic platforms (opens in a new tab)

  19. The mechanism of thin film Si nanomachining using femtosecond laser pulses

    Femtosecond (fs) laser ablation has been the subject of intense recent research. The pulse time ('width') is shorter than the electronic relaxation time, resulting in a decoupling of the period of laser illumination and the melting of the substrate. Since the laser does not directly heat the …

    mit Repository record for The mechanism of thin film Si nanomachining using femtosecond laser pulses (opens in a new tab)

  20. Selective SiGe nanostructures

    Selective epitaxial growth (SEG) of SiGe on patterned SiO2/Si substrates by ultra-high vacuum chemical vapor deposition (UHVCVD) shows promise for the fabrication of novel SiGe microelectronic structures. This work explores selective growth conditions in the SiH2Cl2/SiH4/GeH4/H2 system between …

    mit Repository record for Selective SiGe nanostructures (opens in a new tab)

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