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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 137 for “"Silicon carbide (SiC)"”.
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High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors
… provides insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this …
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The Development and Packaging of a High-Density, Three-Phase, Silicon Carbide (SiC) Motor Drive
… device manufacturers are developing silicon carbide (SiC) semiconductor technology.</p> <p>In this dissertation, the author discusses the design, development, packaging, and fabrication of the world's first multichip power module (MCPM) that integrates SiC power transistors with …
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The effect of silicon carbide (SiC) on physical and mechanical properties of recycled aluminium chip AA6061
… AA6061 chips were recycled to fabricate with SiC (2.5, 5 and 7.5 wt.%) and Al powder (10, 30 and 50 wt.%) by using uniaxial cold compaction at 9 tons for 20 minutes and sintering process at a temperature of 552°C. The effects of the various composition of Al and SiC powder on the …
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A Wide Bandgap Silicon Carbide (SiC) Gate Driver for High Temperature, High Voltage, and High Frequency Applications
<p>The potential of silicon carbide (SiC) for modern power electronics applications is revolutionary because of its superior material properties including substantially better breakdown voltage, power density, device leakage, thermal conductivity, and switching speed. Integration of gate driver …
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Effect of silicon carbide (SiC) on mechanical and physical properties of solid state recycled aluminium aa6061 by using hot extrusion method
… This research aims to investigate the effect of silicon carbide (SiC) on mechanical and properties of recycled aluminium AA6061 produced by hot extrusion method. This study employed full factorial 23 design experiments that should satisfy the two operating temperature (T) of 450°C and 550°C, with …
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Improving the thermal shock resistance of silicon carbide ceramics
… been to increase the thermal shock resistance of silicon carbide (SiC) based ceramics. Several applications utilize SiC in conditions generating thermal stresses, including but not limited to, heat exchangers, rocker nozzles, turbo charger rotors and combustion engine valves. The goal of the Ph.D. …
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Characterisation of mechanically alloyed feedstock for laser-powder bed fusion: titanium silicon carbide metal matrix composite
… with a titanium (Ti6Al4V) matrix reinforced with silicon carbide (SiC) is characterised. The research investigated an innovative and novel feedstock production process involving elements of mechanical alloying, tailored to the requirements of the layer based additive manufacturing (ALM) process. …
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Effect of helium, strontium and silver implanted into silicon carbide on the structural changes and migration of the implants
… layers of chemical vapour deposited carbon and silicon carbide (SiC). The coated fuel is known as the tri-structural isotropic (TRISO) particle. In this coated particle, silicon carbide (SiC) is the main barrier for radioactive fission products. TRISO particle retains quite well majority of the …
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Reactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma
… the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with 1,1,1,2 tetrafluoroethane and …
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High Temperature CMOS Silicon Carbide Asynchronous Circuit Design
… the threshold voltage of the devices. These physical changes affect the setup and hold times of clocked components, such as D-Flip Flops, of a traditional synchronous digital circuit. Focusing primarily on high temperature circuit operation, this dissertation presents a digital circuit design …
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Lifetime Assessment and Real-Time Reliability Evaluation of SIC MOSFETs in Power Converters
The increasing adoption of Silicon Carbide (SiC) MOSFETs in modern power converters enables higher efficiency and faster switching but raises new challenges in reliability under thermal and electrical stresses. This thesis presents a comprehensive framework for assessing and enhancing the lifetime …
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Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs
… for the measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD. This measurement system can …
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Modeling reactive rarefied flows in Chemical Vapor Infiltration using Direct Simulation Monte Carlo
… (CVI) is a key method for fabricating silicon carbide (SiC) matrix composites. Gas-phase precursors flow into a porous fiber, react, and deposit to form the ceramic matrix. Deposition quality and rate are strongly influenced by surface reactions, depending on temperature, gas flow, and …
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Overview and development of a wide bandgap, high temperature circuit and measurement solution
… materials, primarily gallium nitride (GaN) and silicon carbide (SiC), research has pushed toward high temperature power circuit operation to either reduce cooling system requirements or operate in high temperature environments due to their theoretically higher temperature capacity when compared …
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Characterization, Reliability and Packaging for 300 °C MOSFET
Silicon carbide (SiC) is a wide bandgap material capable of higher voltage and higher temperature operation compared to its silicon (Si) counterparts due to its higher critical electric field (E-field) and higher thermal conductivity. Using SiC, MOSFETs with a theoretical high temperature operation …
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Numerical analysis of plastic deformation in metal-ceramic nanolayers during cyclic indentation
… consisting of alternating aluminum (Al) and silicon carbide (SiC) thin films on a silicon (Si) substrate is indented by a conical diamond indenter. In this study, both rate-independent and rate-dependent plasticity models are considered. It is found that, in the multilayered material plastic …
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Electrical Design Considerations and Packaging of Power Electronic Modules
… were applied to design and analyze a 50KVA 650V silicon carbide (SiC) half-bridge power electronic power module consisting of three separate power substrates interconnected in parallel. The layout of this power module was constrained by the existing module housing. The parasitic inductances of …
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A Silicon Carbide Power Management Solution for High Temperature Applications
… breaking through the limitations of traditional silicon. Gallium nitride (GaN) and silicon carbide (SiC), both of which are wide bandgap materials, have garnered the attention of researchers and gradually gained market share. Although these wide bandgap power devices enable more ambitious …
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A SiC JFET-Based Three-Phase AC PWM Buck Rectifier
Silicon carbide (SiC) power switching devices promise to be a major breakthrough for new generation ac three-phase power converters, offering increased junction temperature, low specific on-resistance, fast switching, and low switching loss. These characteristics are desirable for increasing power …
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Bayesian Optimization of PCB-Embedded Electric-Field Grading Geometries for a 10 kV SiC MOSFET Power Module
… PCB-integrated bus bar for a 10 kV bondwire-less silicon-carbide (SiC) MOSFET power module. Due to the ultra-high-density of the power module, careful design of field-grading structures inside the bus bar is required to mitigate the high electric field strength in the air. Using Bayesian …
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