Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 20 of 357 for “"Silicon carbide"”.

  1. Sintering of silicon carbide

    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1986.

    mit Repository record for Sintering of silicon carbide (opens in a new tab)

  2. Carbon stars and silicon carbide

    … by carbonaceous compounds. One of these, silicon carbide (SiC) has been extensively investigated in an attempt to discover the conditions present in these dust shells. In this work, we investigate the nature and uses of SiC for astronomical research, and in particular what SiC can tell us …

    missouri Repository record for Carbon stars and silicon carbide (opens in a new tab)

  3. Self-diffusion in silicon carbide.

    Massachusetts Institute of Technology. Dept. of Metallurgy. Thesis. 1965. Sc.D.

    mit Repository record for Self-diffusion in silicon carbide. (opens in a new tab)

  4. Engineered Alumina / Silicon Carbide Laminated Composites

    High-melting temperature oxides, carbides and nitrides are superior in hardness and strength to metals, especially in severe conditions. However, the extensive use of such ceramics in structural engineering applications often encountered critical problems due to their lack of damage tolerance and …

    trento Repository record for Engineered Alumina / Silicon Carbide Laminated Composites (opens in a new tab)

  5. Ion Implantation Synthesis of Silicon Carbide

    Silicon wafers with 200A of carbon deposited on the surface were implanted with 50 keV N⁺ ions at a dose of 1x10¹⁶ ions/cm² at room temperature. The implanted samples were cut to several pieces and annealed in vacuum (at a pressure of 5x10⁻⁸ torr) at temperatures of 800°C and 900°C, and inert gas …

    mo-state Repository record for Ion Implantation Synthesis of Silicon Carbide (opens in a new tab)

  6. Silver transport in CVD silicon carbide

    … silver transport through and release from CVD silicon carbide. Results of these experiments show that silver does not migrate via classical diffusion in silicon carbide. Silver release is, however, likely dominated by vapor transport through cracks in SiC coatings. The results of silver ion …

    mit Repository record for Silver transport in CVD silicon carbide (opens in a new tab)

  7. Novel Three-Dimensional Silicon Carbide Nano-Structures

    Silicon carbide nanotubes have been found to have the same excellent mechanical properties in extreme thermal and oxidative environments as bulk silicon carbide, but with the resiliency similar to carbon nanotubes due to quantum size effects. The simplest, most cost efficient method to synthesize …

    rice Repository record for Novel Three-Dimensional Silicon Carbide Nano-Structures (opens in a new tab)

  8. Growth and stability of silicon carbide polytypes.

    cambridge

  9. The fabrication of silicon carbide heating elements

    … to determine the relative amounts of α- and β-silicon carbide present in these materials. It was confirmed that the α- to β-silicon carbide transformation occurs during heat treatment, because of the influence of the nitrogen atmosphere in the furnace. The fabrication parameters important in …

    cape-town Repository record for The fabrication of silicon carbide heating elements (opens in a new tab)

  10. Silicon carbide oxidation in high temperature steam

    … offering promising results is the use of silicon carbide (SiC) cladding in nuclear reactor fuel rod designs. SiC, a robust ceramic which reacts very slowly with water or steam, has many features that meet or exceed that of zircaloy including the ability to withstand higher temperatures due …

    mit Repository record for Silicon carbide oxidation in high temperature steam (opens in a new tab)

  11. Direct Torque Control for Silicon Carbide Motor Drives

    … efficiency. Through the use of the emerging silicon carbide (SiC) devices, which have lower switching losses compared to their silicon counterparts, it is feasible to achieve high efficiency and low torque ripple simultaneously for DTC drives. </p> <p>To overcome the above challenges, a SiC …

    arkansas Repository record for Direct Torque Control for Silicon Carbide Motor Drives (opens in a new tab)

  12. High Temperature CMOS Silicon Carbide Asynchronous Circuit Design

    … with a wide-bandgap semiconductor material, Silicon Carbide (SiC). A total of nineteen circuits have been designed and fabricated. Chip testing results show correct operation for all circuits returned from fabrication, with most performing at or above the targeted temperature of 300°C.</p>

    arkansas Repository record for High Temperature CMOS Silicon Carbide Asynchronous Circuit Design (opens in a new tab)

  13. Metal-assisted chemical etching of 4H silicon carbide

    Metal-assisted chemical etching (MacEtch) is a wet etching method that can produce high aspect ratio nanostructures with minimal crystal damage. The MacEtch process has been demonstrated to overcome limitations of dry and wet etching in several materials, studied extensively since its discovery by …

    uiuc Repository record for Metal-assisted chemical etching of 4H silicon carbide (opens in a new tab)

  14. Tensile creep of silicon carbide whisker-reinforced alumina composites

    <p>Alumina composites with 10, 20 and 30 volume % SiC whiskers were fabricated using colloidal processing methods followed by uniaxial hot pressing. The tensile creep properties of these materials have been studied between 1200°C and 1400°C. The composite slurries showed the best stability at pH = …

    mcmaster Repository record for Tensile creep of silicon carbide whisker-reinforced alumina composites (opens in a new tab)

  15. Green state joining of silicon carbide using polymer precursors

    … In this work, methods of green state joining of silicon carbide using polymer precursors are explored. Pastes containing either polycarbosilane (PCS) or Allylhydridopolycarbosilane (AHPCS) are used in the joining process. It has been demonstrated that joints formed under external pressure using …

    iastate Repository record for Green state joining of silicon carbide using polymer precursors (opens in a new tab)

  16. Modeling of a silicon/silicon carbide pressureless infiltration process

    … several small protrusions on the surface of silicon/silicon carbide metal matrix composites, which were created using a customized pressureless infiltration technique. These protrusions, called overfillings, differed in size and were spontaneously distributed on the surface of the infiltrated …

    texas Repository record for Modeling of a silicon/silicon carbide pressureless infiltration process (opens in a new tab)

  17. Silicon infiltration of silicon carbide selective laser sintered preforms

    … to skeletal microstructures. In this study, silicon carbide preforms are created using selective laser sintering. These parts are then infiltrated with an epoxy to decrease slumping of the part. They are then infiltrated using high temperature pressureless infiltration of a silicon matrix. …

    texas Repository record for Silicon infiltration of silicon carbide selective laser sintered preforms (opens in a new tab)

Page 1 of 18