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Showing 1 to 9 of 9 for “"Silicon Carbide (SiC) devices"”.
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Evaluation of Voltage-Controlled Active Gate-Drivers for SiC MOSFET Power Semiconductors
With the development and use of Silicon-Carbide [Silicon-Carbide (SiC)] devices come a host of advantages, including higher switching frequency, improved thermal performance, and higher voltage rating. This higher switching frequency can reduce the size of the con- verter system, but is typically …
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Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices
… study of potential utilization of the emerging silicon carbide (SiC) devices, two SiC active switches, namely 1.2 kV, 5 A SiC JFET manufactured by SiCED, and 1.2 kV, 20 A SiC MOSFET by CREE, have been investigated systematically in this thesis. The static and switching characteristics of the two …
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Electromagnetic Interference and Compatibility within SiC-based Medium Voltage Converters
The emergence of silicon carbide (SiC) devices gives rise to more severe electromagnetic interference (EMI) challenges than ever before due to their fast switching capability. Meanwhile, medium voltage (MV) high power converters have been pushed to higher power, higher voltage, and higher power …
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Power Density Optimization of SiC-based DC/AC Converter for High-Speed Electric Machine in More/All-electric Aircraft
… dc/ac converter systems with high power density. Silicon Carbide (SiC) devices, known for their superior performance over traditional silicon-based devices, facilitate this increase in power density. Nonetheless, achieving optimal power density faces challenges due to the unique requirements and …
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Direct Torque Control for Silicon Carbide Motor Drives
… efficiency. Through the use of the emerging silicon carbide (SiC) devices, which have lower switching losses compared to their silicon counterparts, it is feasible to achieve high efficiency and low torque ripple simultaneously for DTC drives. </p> <p>To overcome the above challenges, a SiC …
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Integration of Power Electronics Building Block Using Polyimide Substrates
The advancement of silicon carbide (SiC) devices has enabled a new generation of high-density, fast-switching power converters for automotive, marine, and aerospace applications. One of these converters is the SiC-based Power Electronics Building Block (PEBB), which integrates semiconductor …
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High-Frequency Oriented Design of Gallium-Nitride (GaN) Based High Power Density Converters
The wide-bandgap (WBG) devices, like gallium nitride (GaN) and silicon carbide (SiC) devices have proven to be a driving force of the development of the power conversion technology. Thanks to their distinct advantages over silicon (Si) devices including the faster switching speed and lower …
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Synchronized Communication Network for Real-Time Distributed Control Systems in Modular Power Converters
… by the growing availability of medium-voltage silicon carbide (SiC) devices, fast-switching-enabled novel control schemes raise a high synchronization requirement for the communication network. Power electronics system network (PESNet) 3.0 is a proposed next-generation communication network …
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Circuits and Modulation Schemes to Achieve High Power-Density in SiC Grid-connected Converters
The emergence of silicon-carbide (SiC) devices has been a 'game changer' in the field of power electronics. With desirable material properties such as low-loss characteristics, high blocking voltage, and high junction temperature operation, they are expected to drastically increase the power …