Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 3 of 3 for “"Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)"”.
-
Protection, Control, and Auxiliary Power of Medium-Voltage High-Frequency SiC Devices
… to the superior characteristics compared to its silicon (Si) counterpart, the wide bandgap (WBG) semiconductor enables next-generation power electronics systems with higher efficiency and higher power density. With higher blocking voltage available, WBG devices, especially the silicon carbide …
-
Turn-Off Voltage Sharing of Field-Stop IGBTs in Series Connection under Inductive Load Conditions
Operating Silicon (Si) Insulated Gate Bipolar Transistors (IGBTs) in series connection is attractive to many power electronic applications, including converters, hybrid circuit breakers, etc. To operate IGBTs in series connection, regulating the voltage sharing between the IGBTs during the IGBT …
-
Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control
… scaling feasibility of several low voltage SiC MOSFET modules operated as a single series-connected switch using active gate control. Both multilevel and two-level topologies are capable of achieving higher blocking voltages in high-power converter applications. Compared to multilevel …