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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 22 for “"Silicon 100"”.
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Surface decomposition studies of trimethylgallium on silicon(100)
The trimethylgallium/silicon system is fundamentally and industrially important in microelectronics processing. In this study, the decomposition of trimethylgallium (TMG) on silicon (100) was investigated using thermal desorption spectroscopy (TDS), x-ray photoelectron spectroscopy (XPS), infrared …
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Etching, Roughening, and Patterning of Silicon(100) With Halogens
… surface modification dynamics of Cl- and Br-Si(100)-(2 x 1) were studied. Chlorine (Bromine) caused surface roughening that created pits and regrowth islands with minimal desorption of SiCl 2 (SiBr2). The roughening and equilibrium morphologies at 700--750 K for surfaces with various coverages …
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Scanning tunneling microscopy of silicon(100) 2 x 1
The Si(100) 2 x 1 surface, a technologically important surface in microelectronics and silicon molecular beam epitaxy (MBE), has been studied with the scanning tunneling microscope (STM) to attempt to clear up the controversy that surrounds previous studies of this surface. To this end, an …
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Characterization of Boron Nitride Thin Films on Silicon (100) Wafer.
Cubic boron nitride (cBN) thin films offer attractive mechanical and electrical properties. The synthesis of cBN films have been deposited using both physical and chemical vapor deposition methods, which generate internal residual, stresses that result in delamination of the film from substrates. …
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The reaction of molecular fluorine with silicon(100) : adsorption, desorption, and scattering dynamics
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Chemistry, 1990
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Alternative passivation for silicon (100), environmentally benign manufacturing, and cooperative strategy in semiconductor industry
… Our group has used methoxy to protect the bare silicon surface, because we have identified that the industrial standard, hydrogen passivation of silicon (H-Si) degrades rapidly when exposes to air. In this thesis, two new processing steps are added to make this methoxy passivation compatible to …
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Fabrication of Metal and Organic Nanostructures on Silicon(100) With Scanning Tunneling Microscope-Based Lithography
… regions of the H-passivated or D-passivated Si(100)-2 x 1 surface, resulting in nanometer-sized ""templates"" which can then be reacted with various chemical species. Previous work has demonstrated selective oxidation and nitridation of STM- patterned areas by exposing the patterned surface to …
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Cubic phase gallium nitride photonics integrated on silicon(100) for next-generation solid state lighting
… cubic GaN crystals on nanopatterned Si(100) substrates via hexagonal-to-cubic phase transition, and the thesis presents a comprehensive material characterization of the crystals. Crystal growth geometry modeling of GaN on nanopatterned Si(100) substrates is used to estimate the necessary …
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Scanning tunneling microscopy and spectroscopy of wet chemically synthesized porous graphene nanoribbons on hydrogen passivated silicon (100)
… (GNRs) exfoliated onto hydrogen passivated silicon H:Si(100) substrates using a dry contact transfer (DCT) method under ultrahigh-vacuum (UHV) conditions. The porous GNRs are characterized in UHV using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). A unique …
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Synthesis and Characterization of Branched and Hyperbranched Polyetherimides and Selective Chemistry on the Nanolithographically Defined Silicon(100) Surface
… defined, area selective chemistry on the Si(100)-2 x 1 surface. Using the tip of a scanning tunneling microscope (STM) as a localized electron beam, hydrogen can be site selectively removed from the hydrogen-terminated Si(100)-2 x 1 surface in ultrahigh vacuum (UHV) to expose nanometer sized, …
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Theoretical Study of Carbon Nanotubes Adsorbed on the Silicon (100) Surface, And, Explorations on the Modulation of Conductance for Metallic Carbon Nanotubes
Finally, and in a different direction, we calculate the effects of a longitudinal electrostatic perturbation on a metallic carbon nanotube to demonstrate conductance modulation. The external modulation would be screened in bulk metals but occurs in nanotubes because of their quasi two-dimensional …
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Theoretical study of carbon nanotubes adsorbed on the silicon (100) surface and explorations on the modulation of conductance for metallic carbon nanotubes
… carbon nanotubes adsorbed on the unpassivated Si(100) surface. A dramatic reduction of the semiconducting gap for these hybrid systems as compared with the electronic gaps of their isolated constitutive components was found. This is caused by the changes in the electronic structure as the surface …
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Residual lattice defects in silicon(100) films doped with low-energy positive boron and positive arsenic ions during growth by molecular-beam epitaxy: Variation with ion energy and growth temperature
Si(100) films were doped with 100, 200, 500, and 1000 eV $\sp{11}$B$\sp+$ and $\sp{75}$As$\sp+$ ions during growth by molecular-beam epitaxy (MBE) at temperatures of 800, 650, and 500 $\sp\circ$C. Photoluminescence (PL) and deep level transient spectroscopy (DLTS) were used to assess optical and …
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Derivative Photoelectron Holography Studies of Metal -Terminated Semiconductor Surfaces
… structure surface. The arsenic terminated silicon (100) surface is studied as an example of a system with a complex holographic image. Results indicate that the angular resolution is actually better than expected from the standard simple approximations usually used to describe photoelectron …
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Optical diffraction-based silicon sensors for the detection of DNA sequences
… characterisation of diffraction-based sensors on silicon (100) substrates for the detection of complementary DNA sequences using colloidal gold labels. In-depth analysis of variations of DNA sequence within the human genome and association with diseases is expected to lead to personalised medical …
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Theoretical study of the molecular processes occurring during the growth of Silicon on Si(100) and SixGe1-x/Si(100)
… occurring on the surface of pure, strained silicon(100)-2??1 as well as silicon-germanium during the growth of silicon by gas-source molecular beam epitaxy (GSMBE). First-principles calculations were mainly used in this work. The surface processes of interest include the initial …
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The Si/SiO(2) Interface Roughness
… the effect of post-oxidation annealing on Si(100)/SiO$\sb2$ and Si(111)/SiO$\sb2$ interface roughness has been investigated. It was found that as-grown $\sim$6nm thick silicon(100) dioxides generate a very high roughness ($\sigma \sim$ 10-15A). However, this roughness can be removed by short …
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Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications
… governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, …
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