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Showing 1 to 20 of 28 for “"SiO2/Si"”.
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TiN/HfO2/SiO2/Si gate stacks reliability : Contribution of HfO2 and interfacial SiO2 layer
Hafnium Oxide based gate stacks are considered to be the potential candidates to replace SiO_2 in complementary metal-oxide-semiconductor (CMOS), as they reduce the gate leakage by over 100 times while keeping the device performance intact. Even though considerable performance improvement has been …
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A Study of Infrared Femtosecond Laser Irradiation on Monolayer Graphene on SiO2/Si Substrate
Graphene is a single hexagonal atomic carbon layer. Since its discovery, graphene is emerging as an exciting and promising new material to impact various areas of fundamental research and technology. It has potentially useful electrical properties for device applications such as graphene …
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Structure-Property Relationships and Adhesion in Polyimides of Varying Aliphatic Content
… to their thermal stability, chemical resistance, and high glass transition temperature. However, deficiencies in their processability, solubility, transparency, and relatively high dielectric constants do not always provide the optimum properties for many specialty microelectronics …
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Influência de bolhas de hélio e da microestrutura sobre a evolução térmica de filmes de alumínio implantados com cobre
… trabalho apresenta os resultados de um estudo sistemático sobre as influências do tamanho de grão de filmes finos de Al e da implantação de íons de He sobre a evolução térmica de distribuições de átomos de Cu e formação de precipitados de Al-Cu. Filmes finos de Al depositados sobre substrato de …
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Durability and Adhesion of a Model Epoxy Adhesive Bonded to Modified Silicon Substrates
The adhesion and durability of model epoxy/silane/SiO2/Si bonded systems were investigated under various conditions, including the type of surface preparation, pH of the environmental media, temperature, cyclic thermal stress, and external applied stress. The fundamental debond mechanism was …
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Properties of graphene nanoribbons obtained by chemical vapor deposition
We use chemical vapor deposition (CVD) to synthesize graphene films on copper foil. After transferring the graphene to SiO2/Si substrates, we pattern the film into graphene nanoribbons (GNRs) of width < ~50 nm and length < ~ 700 nm with Ti/Au contacts. We perform low-bias, high-bias, and …
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Study of thin metal films and oxide materials for nanoelectronics applications
… surface morphology of gold and copper films on SiO2/Si substrates is investigated as a function of annealing temperature. Annealing arranges the Au crystallites in the [111] direction and changes the morphology of the surface. Relaxation of the Au layer at high temperatures is responsible for …
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Crescimento térmico de filmes dielétricos sobre SiC e caracterização das estruturas formadas
… térmico de filmes dielétricos (óxido de silício e oxinitreto de silício) sobre carbeto de silício. Além disso, os efeitos da irradiação iônica do SiC antes de sua oxidação, com o intuito de acelerar a taxa de crescimento do filme de SiO2, também foram investigados. A tese foi dividida em …
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Filmes finos dielétricos para dispositivos microeletrônicos avançados
… nm) de diferentes dielétricos sobre substrato de silício monocristalino. Tendo em vista a aplicação dessas estruturas em MOSFETs (transistores de efeito de campo metal-óxido-semicondutor), estudamos o consagrado óxido de silício (SiO2), os atuais substitutos oxinitretos de silício (SiOxNy) e o …
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Preparation and Characterization of Ferroelectric Thin Films for Tunable and Pyroelectric Applications
Ferroelectric thin films have been extensively studied for their wide applications in pyroelectric detectors and tunable devices. In the present work, pulsed laser deposition (PLD) technique has been employed to deposit ferroelectric Ba(Ti0.85Sn0.15)O3 (BTS) thin films and heterostructures. BTS …
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Selective SiGe nanostructures
Selective epitaxial growth (SEG) of SiGe on patterned SiO2/Si substrates by ultra-high vacuum chemical vapor deposition (UHVCVD) shows promise for the fabrication of novel SiGe microelectronic structures. This work explores selective growth conditions in the SiH2Cl2/SiH4/GeH4/H2 system between …
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An investigation of border traps and interface states in high-k/InGaAs metal-oxide-semiconductor systems
… in metal-oxide-semiconductor field effect transistors (MOSFETs) is to replace SiO2/Si structure with high dielectric constant (high-k) oxides on high mobility channel materials (e.g. InGaAs), which have the potential to achieve a comparable on current and operating frequency to silicon, but at …
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Radiation effects in metal-oxide-semiconductor capacitors
… of various radiations on commercially made Al-SiO2-Si Capacitors (MOSCs). Detailed studies of the electrical and physical nature of such devices have been used to characterise both virgin and irradiated devices. In particular, an investigation of the nature and causes of dielectric breakdown in …
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Optical Enhancement in Periodic Plasmonic Gratings for SERS and Metal-Semiconductor-Metal Photodetectors (MSM-PDs) Applications
… photodetectors (MSM PDs) and the sensitivity of Surface Enhanced Raman Spectroscopy (SERS). This research can benefit many areas of nanoscience and optics, including plasmonic applications, such as, super lenses, nano-scale optical circuits, optical filters, surface plasmon enhanced …
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Processing and Physical Functionality of Multicomponent High Entropy Materials
High entropy materials (HEMs) consist of five or more elements in near equal-atomic percentages and stabilize their structures due to high configurational entropy. The interactions between the manifold incorporated elements could give rise to unusual and often outstanding properties, such as …
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Kontakto grafenas – metalas formavimas ir elektrinių savybių tyrimas /
… into graphene structure and its monolayer synthesis as well as graphene transfer methods using polymer coatings are presented. The main idea of this research is to form a graphene – metal contact and study its contact resistance when for contact formation we used two different metals. In …
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Electronic properties of gallium nitride nanowires
This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. Our GaN nanowires are grown by catalytic vapor growth methods, specifically …
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INVESTIGATION OF PHASE TRANSFORMATIONS IN TRANSITION METAL DICHALCOGENIDES DURING SYNTHESIS AND POST GROWTH
Transition metal dichalcogenides (TMDCs) are promising candidates for use in beyond-Moore electronics, photovoltaics, sensing, and energy storage devices. The highly anisotropic crystal structure of TMDCs is characterized by chemically active edge sites and relatively inert basal plane layers, …
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Thermal transport in graphene-based nanostructures and other two-dimensional materials
… little is known about heat flow in two-dimensional (2D) materials or devices with dimensions comparable to the phonon mean free path (MFP). Here, we investigated thermal transport in graphene-based nanostructures and several other 2D materials. First, we measured heat conduction in nanoscale …
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Nanostructure Characterization, Fabrication and Devices of 2D Mos2 and Mos2/WS2 Hetrostructures
Sparked by the 2D graphene, advanced 2D transition metal dichalcogenides have captured enough attention due to their extraordinary properties and are promising enough for future high speed flexible electronic and optoelectronic devices. Among all the transition metal dichalcogenides, molybdenum …
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