Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 25 for “"SiNx"”.
-
Influence of SiNx/Si interface states on Si solar cells
Impact of the SiN_x/n^+-Si interface on silicon solar cell performance was investigated, where SiN_x is used as a passivation layer. Significant shifts in capacitance, conductance and leakage current characteristics were observed for metal/SiN:H/n^+-Si MOS capacitor when it was subjected to a …
-
Surface reaction mechanisms during the atomic layer deposition of silicon-based dielectrics
… spectroscopy. Initially, we looked at a baseline SiNx ALD process using alternating exposures of Si2Cl6 and NH3 plasma. Our infrared spectra show that H was incorporated during both half cycles in the form of –NH species, leading to a high H content and poor film quality. To improve the film …
-
Rapid thermal processing of silicon solar cells-passivation and diffusion
… RTO (rasche thermische Oxidation) und SiNx mittels PECVD. SiO2–Schichten mittels RTO und CTO passivierten die Emitteroberfläche 2-3mal besser als reine p-typ Siliciumoberflächen. Dagegen passivierte SiNx–Schichten die reine p-typ Oberfläche besser als die Emitteroberfläche. Eine …
-
Nanostructure formation on Germanium by ion irradiation
… ultra-thin (10-20 nm) films of silicon nitride (SiNx) was investigated as a possible way to impact on nanovoid formation kinetics, prevent ambient contaminations and prevent Sn out-diffusion upon thermal treatments. Firstly, low temperature Sn+ implants were carried out in order to define a …
-
Pulsed Laser Dielectric Ablation for Copper-plated Silicon Solar Cells
… short laser pulses and textured silicon nitride (SiNx)/Si surfaces. It is shown that picosecond laser pulses of the longer wavelength of 532 nm result in melting depths of ~ 1 µm and the SiNx being primarily ablated by the indirect ‘spallation’ process, whereas for 266 nm pulses melting depths are …
-
Diamond-like carbon and ceramic materials as protective coatings grown by pulsed laser deposition
… properties of smooth, homogeneous, and adherent SiNx ceramic coatings which have been deposited on different substrates such as glass, silicon wafer, tool steels, and tungsten carbide (WC-10%Co) at various processing gas pressures and different laser fluences. The r.f. plasma and the PLD-plasma …
-
Electrical Properties of Nitride/oxide Multilayered Thin Films
… film did not have a smoother surface compared to SiNx films. Therefore, surface roughness was not a factor for the increased dielectric strength of the multilayered films. There were no observed dielectric strength increase for the nitride/nitride, oxide/oxide multilayered films.
-
Self-rolled-up microtube technology for cellular outgrowth guidance and monitoring
… dissertation, the advantages of silicon nitride (SiNx) based s-RuMs are investigated and outlined, showing that insulting properties allow conductance-based and capacitance-based biosensors to be easily integrated into the same channel. In addition, the metal added to this structure can act as a …
-
Application of self-rolled-up membrane technology for enhanced neuron guidance and alignment
… the use of self-rolled-up silicon nitride (SiNx) membranes to culture neurons for future applications for neuroregenerative repair. Through initial characterization of neurite growth on the microtube platform, we demonstrate enhanced alignment of neurites along the microtube topography. …
-
Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors
… nonpolar crystal orientations is presented. The SiNx interlayer was able to reduce the threading dislocation density but was also found to generate voids with longer SiNx growth time. The relationship between voids, threading dislocations, inversion domain boundaries and their associated …
-
Low Dislocation Density Gallium Nitride Templates and Their Device Applications
… steps. Hence, an in situ method using a SiNx interlayer (nano-scale ELOG) has emerged as a promising technique. The GaN templates prepared by this method exhibit a very low dislocation density (low-10-7 cm-2) and excellent optical and electrical properties. As a cost, such high quality …
-
Compliant Epitaxy of Iii-V Compound Semiconductors for Optoelectronic Device Applications
… be superior to other protection layers, such as SiNx and SiO 2, due to their ability to allow dislocation reduction during the oxidation process. Because of the nature of the VLT-grown materials, they can be used in any material system using a variety of host-substrates, making this growth …
-
Biocompatible silicon nitride thin films for self-rolled-up microtube technologies: guiding neurons
… tube for diagnostics. Taking advantage of SiNx’s insulting properties allows conductance-based biosensors to be integrated into the same channel as a surface-enhanced Raman spectroscopy (SERS) sensor. Further, analyte size exclusion is possible via diameter variation and surface …
-
Experimental study of rare-gases excimer VUV system and H2 Lyman-bands calibration
… filament, is used as the hot electron source. A SiNx membrane is applied as the entrance foil separating the high vacuum chamber and the test gas chamber. A Custom-designed UV photon intensifier together with high-resolution CCD detector is used to increase the spectrum resolution up to three …
-
Characterization of Diamond-Semiconductor Interfaces
… as well as substrate material (Si versus SiNx adhesion layers used to produce GaN-on-diamond structures). Finally, a detailed analysis of a GaN-diamond interface formed without the use of an adhesion layer created by a combination of selected area diamond seeding and epitaxial lateral …
-
Nano-Silicon/graphene Composite Anodes For Enhanced Performance Lithium Ion Batteries
… of a conversion active material in the form of SiNx. Imaging, spectroscopy and electrochemical characterizations are highlighted. These strategies contribute to the elucidation of the underlying electrochemical mechanisms pertaining to the N-doping effect, Si alloying and conversion reactions. …
-
Material selection and nanofabrication techniques for electronic photonic integrated circuits
… filter banks were fabricated using SiNx and Si as the high -index core materials. By controlling the electron-beam-exposure dose it is possible to change the average microring-waveguide width to a precision better than 75 pm, despite the 6 nm SEBL address grid. Using postfabrication …
-
Novel materials for silicon based photonics
… platform to study radiation induced effect on SiNx, a-Si and SiC materials. We found a refractive index modulation to the order of 10⁻³ after receiving 10 Mrad Gamma radiation dose.
-
Amorphous silicon thin film transistor as nonvolatile device.
… device with a thin a- Si:H layer embedded in the SiNx gate dielectric layer has been prepared and studied. The hysteresis of the TFT's transfer characteristics has been used to demonstrate its memory function. A steady threshold voltage change between the "0" and "1" states and a large charge …
-
Development of poly-Si/SiOx passivating contacts for advanced Si photovoltaics
… that using Al2O3 as a capping layer on SiNx provides enhanced passivation following fast-firing. Next, we study poly-Si/SiOx passivating contacts in the IBC architecture. We see how dopants can contaminate the isolation region between doped fingers to cause shunting. We also demonstrate …
Page 1 of 2