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Showing 1 to 12 of 12 for “"SiH4"”.
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Modeling and experimental process optimization for a SiH4 + H2 surface wave plasma discharge for silicon photovoltaics
… excitation. The process gases used were silane (SiH4) and hydrogen (H2). The plasma source was shown to be advantageous in depositing films at very high deposition rate, exceeding 2 nm/s for nc-Si, while deposition of a-Si was observed at 10 nm/s and could be increased if a higher flowrate mass …
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Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
… the development of in situ vacuum anneal and SiH4 or SiH4+NH3 passivation to realize high quality metal gate/high-k dielectric stacks on GaN surface using a multi-chamber metal-organic chemical vapor deposition (MOCVD) gate cluster tool. Chapter 3 demonstrates the realization of AlGaN/GaN …
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In Situ Enrichment and Epitaxial Growth of 28Si Films via Ion Beam Deposition
… starting from a natural abundance silane gas (SiH4) source. The Si is enriched in situ by mass separating the ions in a magnetic field just before deposition onto Si(100) substrates. Initial proof of principle experiments enriching 22Ne and 12C were also conducted. In the course of achieving …
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Optical Properties of Simple Molecules
… excited states of tetrahedral molecules CH4 and SiH4, using two independent approaches. The results compare favorably both with the salient features of recent soft X-ray absorption experiments and with each other. Checks of the computational methods were made using neon and NH+4 as test cases. A …
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Chemical vapor deposition of thin films for ULSI interconnect metallization
… for the growth of tantalum thin films using SiH4 reduction of TaF5. Using a temperature of 350„aC and reactant partial pressures of 0.2 Torr TaF5 and 0.3 Torr SiH4, we obtain a growth rate of 2.2 ¡Ó 1.7 nm/min. The XPS analysis results show that the Ta film is Si free, but contains relatively …
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Plasma Enhanced Layer-by-layer Deposition and Nano-crystallization of Si:H films
… A capacitively-coupled plasma (CCP) with SiH4/He feed gas was used to deposit thin a-Si:H layers that were subsequently exposed to a H2 or D2 inductively-coupled plasma (ICP) to induce crystallization in the films. Deposition and nano-crystallization were performed sequentially and …
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Determination of the gas-flow patterns inside the hot-wire chemical vapor deposition system, using computational fluids dynamics software (fluent)
… FLUENT. The mixture of two gases (Silane gas (SiH4) and Hydrogen gas (H2)) are delivered into the hot-wire chemical vapor deposition system (HWCVD) with the two deposited substrates (glass and Silicon). This process is performed by the solar cells group of the Physics department at the …
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Selective SiGe nanostructures
… selective growth conditions in the SiH2Cl2/SiH4/GeH4/H2 system between 650-850⁰C, without the addition of C12 or HC1, on substrates patterned by both conventional and interferometric lithography. We have achieved several important milestones for the fabrication of vertical MOSFETs by …
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Understanding the molecular-level chemistry of H2O plasmas and the effects of surface modification and deposition on a selection of oxide substrates
… from NH3 and NH3/O2 mixtures; SiH radicals in SiH4, SiH4/Ar, Si2H6 and Si2H6/Ar plasmas; and CH in plasmas formed from mixtures of CH4/Ar. These species were probed with both laser induced fluorescence (LIF) and OES. For the majority of the plasma species studied, θV are much higher than θR and …
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High Growth Rate and High Purity Semi-Insulating Epitaxy Using Dichlorosilane For Power Devices
… vapor deposition (CVD) of 4H-SiC using silane (SiH4) and light hydrocarbons e.g. propane (C3H8) or ethylene (C2H4) is the standard technology of growing epitaxial layers for any device applications. For high-voltage (>10 kV) devices made of SiC thick (>100 μm), low doped (~2x1014 cm-3) epilayers …
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Structure/processing relationships in vapor-liquid-solid nanowire epitaxy
… were found to be in good agreement with a SiH4 reaction model which associates decomposition to form SiH2 with higher nanowire growth rates. III-V nanowire growth on Si substrates was investigated as a possible route to the realization of high performance compound semiconductor devices on …
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THE USE OF PECVD SILICON OXYNITRIDE THIN-FILMS IN MICROELECTRONICS MANUFACTURING
… that has been developed in this project utilizes SiH4, N₂, N₂O and He as reactant gases to deposit silicon oxynitrides by plasma enhanced chemical vapor deposition (PECVD). Comparing with the conventional method using SiH₄ and N₂O as reactant gases, it provides a much wider range of film …