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Showing 1 to 8 of 8 for “"SiGe HBTs"”.
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Reliability of SiGe HBTs for extreme environment and RF applications
… the safe-operating-area of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments. The degradation of SiGe HBTs due to mixed-mode DC and RF stress has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs …
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A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs
… in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration …
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Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization
… of the proposed work is to study the behavior of SiGe HBTs at cryogenic temperatures and its relation to device scaling and optimization. Not only is cryogenic operation of these devices required by space missions, but characterizing their cryogenic behavior also helps to investigate the …
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Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments
… promising robustness in extreme environments is SiGe HBTs. SiGe HBTs have shown superior performance at low temperatures and are multi-Mrad tolerant to total dose effects. However, a type of extreme environment not often looked at in the context of SiGe HBTs is high temperature and its …
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Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments
Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of …
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Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology
… reliability in radiation-rich environments. SiGe BiCMOS technology in particular is positioned as an excellent candidate to satisfy all of these requirements. The objective of this research is to develop predictive modeling tools that can be used to design new mixed-signal technologies and …
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Design and Characterization of RFIC Voltage Controlled Oscillators in Silicon Germanium HBT and Submicron MOS Technologies
… Si-based device technologies: Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) for a cross-coupled collectors circuit and Graded-Channel MOS (GC-MOS) transistors for a complementary (CMOS) implementation. The circuits were fabricated using the Motorola 0.4 μm CDR1 SiGe BiCMOS …
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SiGe BiCMOS RF ICs and Components for High Speed Wireless Data Networks
… heterojunction bipolar transistors (SiGe HBTs) into established "digital" CMOS processes has provided analog performance in silicon that is not only competitive with III-V compound-semiconductor technologies, but is also potentially lower in cost. Combined with improvements in silicon …