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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 29 for “"SiGe BiCMOS"”.
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SiGe BiCMOS integrated circuits for optical communication transmitters
… use of advanced manufacturing processes in SiGe BiCMOS technology. In the first part, the capability of a silicon photonics platform for the implementation of driver and Mach-Zehnder modulator (MZM) is investigated. With the aim to implement a high-speed solution using this platform, a …
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SiGe BiCMOS RF ICs and Components for High Speed Wireless Data Networks
The advent of high-fT silicon CMOS/BiCMOS technologies has led to a dramatic upsurge in the research and development of radio and microwave frequency integrated circuits (ICs) in silicon. The integration of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) into established "digital" …
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Performance Comparison of Harmonically Tuned Power Amplifiers at 28 GHz in SiGe BiCMOS
As the demand for wireless electronics is increasing, more and more gadgets are connected wirelessly and devices are being improved constantly. The need of the new research and development for advance electronics with high performances is the priority. The data transfer rates are improved for …
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Linearized 4-7 GHz LC Tunable Filter with Active Balun in 0.18um SiGe BiCMOS
… with active baluns implemented in 0.18 μm SiGe BiCMOS technology. Fourth order filtering is achieved by subtracting two 2nd order LC-tanks. This approach allows 3-dB bandwidth to be tunable from 10% to 20%. In each design, a linearized input active balun is employed to drive the LC-tanks …
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Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology
… reliability in radiation-rich environments. SiGe BiCMOS technology in particular is positioned as an excellent candidate to satisfy all of these requirements. The objective of this research is to develop predictive modeling tools that can be used to design new mixed-signal technologies and …
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Linear Analog Front -End Circuits for Fiber -Optic Communication Systems
… consumes 102 mW of power in a 3.3-V, 0.25-mum SiGe BiCMOS process.
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Power supply switching for a mm-wave asymmetric multilevel outphasing power amplifier system
… phase paths. This work was designed in a 130-nm SiGe BiCMOS process.
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5-6 GHz RFIC Front-End Components in Silicon Germanium HBT Technology
… these frequencies are needed. Silicon Germanium (SiGe) BiCMOS technology represents one possible solution to this problem. The SiGe BiCMOS process has the potential for low cost since it leverages mature Si process technologies and can use existing Si fabrication infrastructure. In addition, SiGe …
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Outphase power amplifiers in OFDM systems
… power amplifier is fabricated using the IBM 7WL SiGe BiCMOS process technology.
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Integrated Tunable LC Higher-Order Microwave Filters for Interference Mitigation
… proposed and implemented in Silicon Germanium (SiGe) BiCMOS technology. Along with center frequency tuning, the filter achieves first ever reported 3-dB bandwidth tuning from 2% to 25%, representing 120 MHz to 1.5 GHz of bandwidth at 6 GHz. A new set of design equations were developed for the …
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Pulse-based ultra-wideband transmitters for digital communication
… The transmitter has been fabricated in a 0.18pm SiGe BiCMOS process, and experimental results are presented. A second transmitter has been developed that uses an all-digital architecture.
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Terahertz beam-steering imager using a scalable 2D-coupled architecture and multi- functional heterodyne pixels
… a 10 x 10 array is fabricated using a 130-nm SiGe BiCMOS process and tested.
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Design and Reliability of mm-Wave Circuits In Silicon-Germanium
… the Line (BEOL: metal stack-up) in a commercial SiGe BiCMOS processes. The resulting performances utilize novel design techniques that allow them to be competitive with existing state-of-the-art designs across multiple IC technologies. The second goal of this research is to understand the impact …
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Energy efficient ultra-wideband radio transceiver architectures and receiver circuits
… designing a 3.1-10.6 GHz front-end in a 0.18 pm SiGe BiCMOS process, featuring an unmatched LNA and 802.11a switchable notch filter for interference mitigation. A 100 Mbps system demo is implemented to realize a wireless link. In the low rate regime, energy/bit increases because fixed power costs …
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Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology.
… to design RF circuits using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) for communication system. The packaging effect for the SiGe chip using liquid crystal polymer (LCP) is presented and methodology to derive the model for the package is discussed. Chapter 1, we discuss …
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Development of Low-power Wireless Sensor Nodes based on Assembled Nanowire Devices
… (DEP) assembly; and (2) design of a low-power SiGe BiCMOS multi-band ultra-wideband (UWB) transmitter for wireless communications with other nodes and/or a central control unit in a wireless sensor network. For the first part of this work, a DEP assembly test chip was designed and fabricated …
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A high speed serializer/deserializer design
… peak-to-peak jitter of 10ps using 0.18microm SiGe BiCMOS technology. The power consumption is 3.6W with 3.4V power supply voltage. At a 60 Gb/s data rate the simulated peak-to-peak jitter was 4.8ps using 65nm CMOS technology. The power consumption is 92mW with 2V power supply voltage.</p><p>A …
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A Novel Variable Inductor-Based VCO Design with 17% Frequency Tuning Range for IEEE 802.11AD Applications
… All 3 VCOs are fabricated using a 130 nm SiGe BiCMOS process.
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Power efficient Transmit/Receive (T/R) Elements for Integrated mm-Wave Phased Arrays
… transmit and receive (T/R) modules in 130 nm SiGe BiCMOS technology based on the proposed PS and our measurements show high power efficiency with the lowest power consumption at W-band to our knowledge (18mW and 26mW power dissipations at receiver (Rx) and transmitter (Tx) front-ends …
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