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Showing 1 to 2 of 2 for “"SiCOH"”.
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Structural Design and Optimization of 65nm Cu/low-k Flipchip Package
… low-k material used in this study is non-porous SiCOH with a k value of 2.9. A parametric study using 2D plane strain finite element analysis was performed to study the effect of various parameters on the reliability of the large die package in order to arrive at an optimized design. In order to …
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Resistive Switching in Porous Low-k Dielectrics
Integrating nanometer-sized pores into low-k ILD films is one of the approaches to lower the RC signal delay and thus help sustain the continued scaling of microelectronic devices. While increasing porosity of porous dielectrics lowers the dielectric constant (k), it also creates many reliability …