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Showing 1 to 3 of 3 for “"SiC diode"”.

  1. CCM Totem Pole Bridgeless PFC with Ultra Fast IGBT

    The totem pole PFC suffers from the Mosfet body diode reverse recovery issue which limits this topology adopted in the CCM high power condition. As the ultra-fast IGBT which is capable of providing 100 kHz switching frequency is available in the market, it is possible to apply the totem pole PFC in …

    vt Repository record for CCM Totem Pole Bridgeless PFC with Ultra Fast IGBT (opens in a new tab)

  2. Planar Packaging and Electrical Characterization of High Temperature SiC Power Electronic Devices

    … examines the packaging of high-temperature SiC power electronic devices. Current-voltage measurements were conducted on as-received and packaged SiC power devices. The planar structure was introduced and developed as a substitution for traditional wire-bonding vertical structure. The planar …

    vt Repository record for Planar Packaging and Electrical Characterization of High Temperature SiC Power Electronic Devices (opens in a new tab)

  3. Technology for Planar Power Semiconductor Devices Package with Improved Voltage Rating

    The high-voltage SiC power semiconductor devices have been developed in recent years. They cause an urgent in the need for the power semiconductor packaging to have not only low interconnect resistance, less noise, less parasitic oscillations, improved reliability, and better thermal management, …

    vt Repository record for Technology for Planar Power Semiconductor Devices Package with Improved Voltage Rating (opens in a new tab)