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Showing 1 to 20 of 33 for “"SiC devices"”.
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Protection, Control, and Auxiliary Power of Medium-Voltage High-Frequency SiC Devices
… With higher blocking voltage available, WBG devices, especially the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), have been widely explored in various medium-voltage (MV) applications in both industry and academia. However, due to the high di/dt and high …
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Analysis and Design for a High Power Density Three-Phase AC Converter Using SiC Devices
… converter system. In addition, with the emerging SiC device technology the operating frequency of the converter can be potentially pushed to the range from tens of kHz to hundreds of kHz at higher voltage and higher power conditions. The extended frequency range brings opportunities to further …
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Condition monitoring of SiC MOSFETs on LLC resonant converter
Silicon carbide (SiC) MOSFETs are widely acknowledged for low loss, fast switching and remarkable thermal conductivity compared to silicon (Si) counterparts. SiC-based power electronic converters, therefore, are optimal when operated at medium voltage to high voltage in high switching frequency …
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PCB Busbar Design and Verification for a Multiphase SiC-based All-electric Aircraft Powertrain Converter
… and implementation of silicon carbine (SiC) devices is steadily increasing facilitating the electrification of aircrafts. In this thesis, a printed circuit board (PCB) based heavy copper busbar design and verification are introduced for a SiC based 250 kW multiphase drive system operated …
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Evaluation of Voltage-Controlled Active Gate-Drivers for SiC MOSFET Power Semiconductors
… and use of Silicon-Carbide [Silicon-Carbide (SiC)] devices come a host of advantages, including higher switching frequency, improved thermal performance, and higher voltage rating. This higher switching frequency can reduce the size of the con- verter system, but is typically associated with …
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Design and Fabrication of Inverter and Rectifier Modules for Indirect Matrix Converter Applications
… power converter applications, silicon carbide (SiC) power semiconductor devices are preferred over their silicon counterparts due to many advantages such as wide bandgap, high junction temperatures and low on-state resistance. The SiC devices provide reduced conduction and switching losses. Due …
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Switching Trajectory Control for High Voltage Silicon Carbide Power Devices with Novel Active Gate Drivers
<p>The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or …
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Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices
… utilization of the emerging silicon carbide (SiC) devices, two SiC active switches, namely 1.2 kV, 5 A SiC JFET manufactured by SiCED, and 1.2 kV, 20 A SiC MOSFET by CREE, have been investigated systematically in this thesis. The static and switching characteristics of the two switches have …
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Circuits and Modulation Schemes to Achieve High Power-Density in SiC Grid-connected Converters
The emergence of silicon-carbide (SiC) devices has been a 'game changer' in the field of power electronics. With desirable material properties such as low-loss characteristics, high blocking voltage, and high junction temperature operation, they are expected to drastically increase the power …
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Physical Modeling of Silicon Carbide Power Junction Field Effect Transistor and Model Levels For Semiconductor Devices
<p>Silicon carbide (SiC) is considered the most promising material for next-generation power semiconductor devices due to its superior physical properties in terms of switching speed, breakdown voltage, maximum operating temperature, high thermal conductivity, high current density, and extremely …
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Reliability of GaN high electron mobility transistors on silicon substrates
… High Electron Mobility Transistors are promising devices for high power and high frequency applications such as cellular base stations, radar and wireless network systems, due to the high bandgap and high breakdown field of GaN. However, their reliability is the main hindrance to the deployment of …
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DC Fault Current Analysis and Control for Modular Multilevel Converters
… capability of the converter. A three-phase SiC-based MMC prototype with the Full-Bridge configuration is designed and built. The SiC devices can be readily adopted to take advantage of the wide-bandgap devices in MVDC applications. The Full-Bridge configuration provides additional control …
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MODELLING AND DESIGN OF DIAMOND POWER SEMICONDUCTOR DEVICES
… despite its tremendous potential, fabricated devices based on this material have not yet delivered the expected high-performance. This is due to three main reasons: (i) the lack of consistent physical models and design approaches specific to diamond-based devices that could significantly …
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Modeling and Design of a SiC Zero Common-Mode Voltage Three-Level DC/DC Converter
As wide-bandgap devices continue to experience deeper penetration in commercial applications, there are still a number of factors which make the adoption of such technologies difficult. One of the most notable issues with the application of wide-bandgap technologies is meeting existing noise …
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Design and Development of High Density High Temperature Power Module with Cooling System
In recent years, the SiC power semiconductor has emerged as an attractive alternative that pushes the limitations of junction temperature, power rating, and switching frequency of Si devices. These advanced properties will lead converters to higher power density. However, the reliability of the SiC …
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Control, Analysis, and Design of SiC-Based High-Frequency Soft-Switching Three-Phase Inverter/Rectifier
… analysis, and design of silicon carbide (SiC)-based critical conduction mode (CRM) high-frequency soft-switching three-phase ac-dc converters (inverter and rectifier). The soft-switching technique with SiC devices grounded in CRM makes the operation of the ac-dc converter at hundreds of …
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Modeling, analysis, simulation and real-time hardware in-the-loop implementation of hybrid/electric vehicles’ powertrain
… vehicles. Further, wide band gap (WBG) devices such as GaN semiconductors and SiC devices have been integrated in the system, one at a time. A comparison study in terms of total power losses and efficiency calculations at different temperatures and switching frequencies due to using each …
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MESOSCALE MICROSTRUCTURE EVOLUTION, RELIABILITY AND FAILURE ANALYSIS OF HIGH TEMPERATURE TRANSIENT LIQUID PHASE SINTERING JOINTS
… in application temperature of power electronic devices, due to the growing power density, miniaturization, and functionality in military and commercial applications, requires new packaging technologies with high temperature and reliability capabilities. Currently, the traditional maximum …
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4H-SiC FinFET devices and modelling
As a semiconductor material, Silicon Carbide (SiC) has promising electrical properties in high-voltage, high-frequency switching applications for various power electronics applications. In particular, SiC power MOSFETs have undergone remarkable development and optimisation, turning them into …
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Design and Testing of a SiC-based Solid-State Bypass Switch for 1 kV Power Electronics Building Blocks
… and low voltage ratings for switching devices. However, without the excellent reliability of the MMC, applications cannot reap these benefits. The MMC topology comprises several series-connected submodules (typically a half-bridge or a full-bridge inverter). As a result of increased …
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