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Showing 1 to 20 of 53 for “"SiC MOSFET"”.
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Advanced characterization of 4H-SiC MOSFET channel [Caratterizzazione avanzata del canale 4H-SiC MOSFET]
Lo sviluppo di MOSFET di potenza ad alte prestazioni in carburo di silicio (SiC) rappresenta un passo fondamentale per l'avanzamento della moderna elettronica di potenza. Grazie all'ampio bandgap, all'elevata conducibilità termica e all'alto campo elettrico, il 4H-SiC è emerso come materiale …
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Simulation of SiC MOSFET Power Converters
… discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter). Different parameters and scenarios were discussed and implemented for both silicon and silicon carbide MOSFET cases. A comparison between …
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Unlocking SiC MOSFET Switching Performance Through Packaging and Instrumentation
… as Gallium Nitride (GaN) and Silicon Carbide (SiC) are leading to improved transistor technologies. These materials allow for smaller transistors with reduced on state resistances and input capacitances, this reduces losses and supports higher switching frequencies. In contrast, packaging and …
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Evaluation of Voltage-Controlled Active Gate-Drivers for SiC MOSFET Power Semiconductors
… and use of Silicon-Carbide [Silicon-Carbide (SiC)] devices come a host of advantages, including higher switching frequency, improved thermal performance, and higher voltage rating. This higher switching frequency can reduce the size of the con- verter system, but is typically associated with …
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Design of 1.7 kV SiC MOSFET Switching-Cells for Integrated Power Electronics Building Block (iPEBB)
… wide-bandgap (WBG) devices like silicon carbide (SiC) allows converters to have higher power and faster switching... To benefit from these devices, the packaging of the converter needs to be carefully considered. This thesis presents the design of a 250 kW integrated power electronics building …
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Double-Side Cooled 3.3 kV, 100 A SiC MOSFET Phase-Leg Modules for Traction Applications
… of a double-side cooled 3.3 kV, 100 A SiC MOSFET phase-leg power module for heavy-duty traction applications. Parasitic extraction and thermal simulations of the module showed a parasitic inductance of 2.89 nH and junction temperature of 108.3 °C at a heat flux of 156 W/cm² under a …
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PCB-Based 1.2 kV SiC MOSFET Packages for High Power Density Electric Vehicle On-Board Chargers
… gate bipolar transistors with silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) has been proposed as a solution to increase the power densities of power converters in some applications. One such application is electric vehicles (EVs) where the efficiency and …
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Bayesian Optimization of PCB-Embedded Electric-Field Grading Geometries for a 10 kV SiC MOSFET Power Module
… bar for a 10 kV bondwire-less silicon-carbide (SiC) MOSFET power module. Due to the ultra-high-density of the power module, careful design of field-grading structures inside the bus bar is required to mitigate the high electric field strength in the air. Using Bayesian optimization and a new …
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High Bandwidth Rogowski Coils, Commutation Loop Stray Inductance, and the Si IGBT and the SiC MOSFET Based Hybrid Concept
… field-effect transistor (MOSFET) and the insulated-gate bipolar transistor (IGBT), deepening the reader’s understanding of these essential components in power electronics. It then focuses on the current commutation loop inductance, underscoring the importance of minimising …
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Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control
… scaling feasibility of several low voltage SiC MOSFET modules operated as a single series-connected switch using active gate control. Both multilevel and two-level topologies are capable of achieving higher blocking voltages in high-power converter applications. Compared to multilevel …
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Failure Modes Analysis and Protection Design of a 7-level 22 kV DC 13.8 kV AC 1.1 MW Flying Capacitor Converter Based on 10 kV SiC MOSFET
… capacitor multilevel converter based on 10 kV SiC MOSFET with 2.5 kHz switching frequency was designed and constructed. Given the complexity of a multilevel topology, the high voltage levels, and the critical nature of the loads, a failure in a high-power converter can incur significant costs, …
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Enhanced Gate-Driver Techniques and SiC-based Power-cell Design and Assessment for Medium-Voltage Applications
… focusing on wide-bandgap-based (WBG) materials. SiC power semiconductors exhibit superiority in terms of switching speed, higher breakdown electric field, and high working temperature, slowly becoming a global solution in harsh medium-voltage (MV) high-power environments. However, to utilize the …
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Characterization, Reliability and Packaging for 300 °C MOSFET
Silicon carbide (SiC) is a wide bandgap material capable of higher voltage and higher temperature operation compared to its silicon (Si) counterparts due to its higher critical electric field (E-field) and higher thermal conductivity. Using SiC, MOSFETs with a theoretical high temperature operation …
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Electrical Integration of SiC Power Devices for High-Power-Density Applications
… The emerging wide-bandgap, silicon carbide (SiC) power devices have become the promising solution to meet these requirements. With these advanced devices, the technology barrier has now moved to the compatible integration technology that can make the best of device capabilities in …
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Switching-Cycle Control and Sensing Techniques for High-Density SiC-Based Modular Converters
… replacing conventional Si IGBT with the superior SiC MOSFET to elevate the power density of MV modular converters has been defined as the concentration of this research work. As the modular multilevel converter (MMC) is the most typical modular converter for high power applications, the research …
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PCB-Embedded Phase Current Sensor and Short-Circuit Detector for High Power SiC-Based Converters
… of the inverter stage by utilizing wide-bandgap SiC MOSFET semiconductor devices in electric vehicle application. In order to achieve higher reliability of the inverter stage, high bandwidth, high performance Rogowski coil switch current sensors are employed. These sensor were embedded on the PCB …
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High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors
… into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These …
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Behavioral Modelling of the Transient and CdV/dt Induced Turn-on of a Hybrid High Power Switch Unit
… strategy is to combine high power Si IGBTs with SiC MOSFETs to take advantage of the SiC MOSFETs superior switching speed and lower switching losses. While this approach has a number of advantages, when it is used in a half bridge arrangement the possibility of false turn becomes a concern. The …
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Protection, Control, and Auxiliary Power of Medium-Voltage High-Frequency SiC Devices
… WBG devices, especially the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), have been widely explored in various medium-voltage (MV) applications in both industry and academia. However, due to the high di/dt and high dv/dt during the switching transient, …
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High power wide bandgap cascode switching circuits
… field-effect transistor (MOSFET), silicon carbide (SiC) junction field-effect transistor JFET and SiC MOSFET. The on-state resistance penalty of the cascode configuration is shown to be modest and potentially mitigated by careful selection of HV transistor gate bias. There …
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