Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 6 of 6 for “"SiC JFET"”.

  1. A SiC JFET-Based Three-Phase AC PWM Buck Rectifier

    Silicon carbide (SiC) power switching devices promise to be a major breakthrough for new generation ac three-phase power converters, offering increased junction temperature, low specific on-resistance, fast switching, and low switching loss. These characteristics are desirable for increasing power …

    vt Repository record for A SiC JFET-Based Three-Phase AC PWM Buck Rectifier (opens in a new tab)

  2. Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices

    … utilization of the emerging silicon carbide (SiC) devices, two SiC active switches, namely 1.2 kV, 5 A SiC JFET manufactured by SiCED, and 1.2 kV, 20 A SiC MOSFET by CREE, have been investigated systematically in this thesis. The static and switching characteristics of the two switches have …

    vt Repository record for Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices (opens in a new tab)

  3. Designing Framework For The Computer Aided Design Of Silicon Carbide JFET Circuits In BLEO Environments

    … Silicon-based semiconductors are the basic components of any modern day electronic devices, and their usage has dominated the marketplace. But these conventional cmos devices cannot exist in an environment consisting of harsh radiation, high temperature and many other environmental …

    mississippi Repository record for Designing Framework For The Computer Aided Design Of Silicon Carbide JFET Circuits In BLEO Environments (opens in a new tab)

  4. Electrical Integration of SiC Power Devices for High-Power-Density Applications

    … The emerging wide-bandgap, silicon carbide (SiC) power devices have become the promising solution to meet these requirements. With these advanced devices, the technology barrier has now moved to the compatible integration technology that can make the best of device capabilities in …

    vt Repository record for Electrical Integration of SiC Power Devices for High-Power-Density Applications (opens in a new tab)

  5. High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors

    … into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These …

    vt Repository record for High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors (opens in a new tab)