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Showing 1 to 2 of 2 for “"SiC BJT"”.

  1. High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors

    … into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These …

    vt Repository record for High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors (opens in a new tab)

  2. Driver Based Soft Switch for Pulse-Width-Modulated Power Converters

    … for current driven bipolar junction transistor (BJT). A new insulated-gate-bipolar-transistor (IGBT) and power metal-oxide-semiconductor field-effect-transistor (MOSFET) gated transistor (IMGT) base drive structure was initially proposed for a high power SiC BJT. The proposed base drive method …

    vt Repository record for Driver Based Soft Switch for Pulse-Width-Modulated Power Converters (opens in a new tab)