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Showing 1 to 1 of 1 for “"Si3Ni4 passivation layer"”.

  1. Development and application of the scanning Kelvin probe for solar cell defect analysis.

    … point charge defects in or on top of the Si3Ni4 passivation layer on a mc-Si (Multicrystalline silicon) solar cell. Furthermore a high resolution SKP has successfully produced images showing direct evidence of polytype related surface potential variations caused by the surface orientations …

    rgu Repository record for Development and application of the scanning Kelvin probe for solar cell defect analysis. (opens in a new tab)