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Showing 1 to 2 of 2 for “"Si subtrates"”.

  1. Gallium nitride high electron mobility transistors in chip scale packaging: evaluation of performance in radio frequency power amplifiers and thermomechanical reliability characterization

    Shover, Michael Andrew, author, Collins, George, advisor, Chandrasekar, Venkatachalam, committee member, Chen, Thomas, committee member, Ackerson, Chris, committee memberColorado State University. Libraries2017

    … Nitride (GaN) have many advantages over their Si counterparts, such as a higher energy bandgap, critical electric field, and saturated electron drift velocity. These parameters translate into devices which operate at higher frequency, voltage, and efficiency than comparable Si devices, and have …

    colostate Repository record

  2. Brillouin scattering from opaque semiconducting alloys and thin films

    Krabach, Timothy Norbert2011

    … scattering spectra were measured in MBE grown single crystal films of A1xGal_xAs alloys and AlxGal_xAs -GaAs supedattices on GaAs substrates, and GaAs films grown on miscut Si substrates. To detect the Brillouin shifted light against the strong elastic background present in opaque materials, a …

    uiuc Repository record