Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 96 for “"Si substrates"”.
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Metallic thin film on SiGe/Si substrates
In this thesis, in-situ XPS and ex-situ AFM have been employed to probe the thermal stability of Si0.8Ge0.2(001) virtual substrate (VS), the interfacial reaction and growth mode of Ni thin film on Si0.8Ge0.2 VS at room temperature (RT), and the germanosilicide phase transformation at high …
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Monolithic heteroepitaxial integration of III-V semiconductor lasers on Si substrates
Monolithic optoelectronic integration on silicon-based integrated circuits has to date been limited to date by the large material differences between silicon (Si) and the direct-bandgap GaAs compounds from which optoelectronic components are fabricated. Graded Ge/GeSi buffer layers grown on …
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Commercialization potential of compositionally graded Ge - Si₁₋x̳Gex̳ - Si substrates for solar applications
This project considers the potential of Ge - Si₁₋x̳Gex̳ - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge and GaAs has proven successful and dual junction solar cells have been …
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Evaluation of the microstructural, electronic and optoelectronic properties of ƴ-CuCl thin films and their fabrication on Si substrates
… (~ 190 meV). In this study, CuCl has been deposited by the vacuum evaporation method on a variety of substrates (amorphous silica glass, indium tin oxide (ITO) coated on glass and Silicon (100)) substrates, encapsulated and characterized as a potential material for optoelectronic applications. …
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Photonic integration of divacancy color centers in silicon carbide and heterogeneous integration of lithium niobate on III-V/Si substrates
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2027-05-01
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Structure/processing relationships in vapor-liquid-solid nanowire epitaxy
The synthesis of Si and III-V nanowires using the vapor-liquid-solid (VLS) growth mechanism and low-cost Si substrates was investigated. The VLS mechanism allows fabrication of heterostructures which are not readily attainable using traditional thin-film metalorganic chemical vapor deposition …
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Empirical correlation of minority carrier lifetime to detect density profile in germanium on silicon heteroepitaxy
High-quality Ge-on-Si (GoS) heterostructures are pursued for many applications, including near infrared (NIR) photodetectors and integration with III-V films for multi-junction photovoltaics. However, challenges such as thermal expansion coefficient mismatch and lattice mismatch between Ge and Si …
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Germanium-rich silicon-germanium materials for field-effect modular application
… capable of monolithically integrated on silicon (Si) substrates offer the possibility of high-speed modulation in a pico second timeframe as well as low power consumption, key requirements for integrated modulator applications. This thesis presents a study of the Franz-Keldysh effect in …
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III-V compositionally graded buffers for heterostructure integration
… commercial applications such as high speed transistors, light emitting diodes, solid state lasers, photovoltaics, and photo-detectors. However, the range of compositions used in these applications is often limited to the range of InyGa₁-yAs compositions which are lattice matched to elementary or …
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GaAsP/InGaP heterojunction bipolar transistors for III-V on Si microelectronics
GaAs-based transistors are capable of operating at high frequency with low noise, and are produced in large volumes for a wide range of applications including microwave frequency ICs for input/output in mobile devices. However, Si CMOS still holds an advantage for digital logic due to wide market …
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Integration of GaAsP alloys on SiGe virtual substrates for Si-based dual-junction solar cells
Integration of III-V compound semiconductors with silicon is an area that has generated a lot of interest because III-V materials and Si are best suited for different types of devices. Monolithic integration enables the best material to be chosen for each application, enabling new functionalities …
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Strain-engineered CMOS-compatible Ge photodetectors
… aid in the integration of photodetectors with Si microelectronics, thus offering a low cost platform for high performance photoreceivers. This thesis demonstrates the first CMOS process compatible high-responsivity Ge p-i-n diodes for 1.55 [mu]m wavelengths. The thermal expansion mismatch …
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Electrical characterization of thin film nanostructure templates
… apparatus for anodizing aluminum films on Si substrates is presented. In addition, an explanation is given for adapting the system to SiC and glass substrates. The system presented is optimized for throughput and safety to focus on volume production. MOS capacitors created with the system …
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Characterization of Ferroelectric Films by Spectroscopic Ellipsometry
… from material dependent optical properties using a systematic multi-layer modeling technique. Variable angle spectroscopic ellipsometry (VASE) models were developed by sequentially testing Bruggeman effective-media approximation (EMA) layers designed to simulate microstructural effects such …
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Material processing of quantum well infrared photodetectors
… (QWIPs) epitaxially grown on GaAs and Si substrates is presented. The advances in epitaxial growth allow the precise control of the dimensions, doping, and matrix concentration of the MQW. Therefore, the design of a QWIP with particular electrical and optical characteristics may be …
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Optical properties of SiGe nanostructures
In this thesis, Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations are reported. Ge NWs grown are ~40 nm in diameter, …
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Size dependence of mechanical responses of materials in small-volume structures
… such as thin films and patterned lines on substrates, is examined. The understanding of stress evolution and deformation behavior of those materials is one of major factors in the fabrication, performance, and reliability of microelectronic devices. The length scales involved in such …
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Integration of GaAsP alloys on Si for high-efficiency Ill-V/Si PV
… that leverages the large area and low cost of Silicon wafers with the high performance of Ill-V materials. Ill-V semiconductor materials have enabled a host of electronic devices from record setting solar cells, high efficiency light emitting diodes, power amplifiers and high-mobility electron …
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