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Showing 1 to 2 of 2 for “"Si MOS Devices"”.

  1. Growth and Characterisation studies of MgO and Mg silicate dielectric layers on Si and InP surfaces

    This thesis investigates the suitability of magnesium oxide (MgO) and magnesium silicate as possible high-k dielectric materials on both silicon and indium phosphide (InP) surfaces. Given that the emphasis of this study was controlling the semiconductor/high-k interface formation, the principle …

    dcu Repository record for Growth and Characterisation studies of MgO and Mg silicate dielectric layers on Si and InP surfaces (opens in a new tab)

  2. Low energy implantation of boron with decaborane ions

    … of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm.) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane …

    njit Repository record for Low energy implantation of boron with decaborane ions (opens in a new tab)