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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 30 for “"Si/SiO2"”.
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The Si/SiO2 Interface Roughness
The Si/Si02 interface roughness has important effects on the performance of metal-oxide semiconductor field effect transistor devices, which dominate contemporary integrated circuit technology. There have been intense efforts to study this system due to its importance. In this work, a new …
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Nonlinear and linear optical studies of Si-SiO2 interfaces
… : mmubn000001_254659667.pdf (Publisher’s version ) (Open Access)
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Study of Si/SiO2 interface passivation and SiO2 reliability on deuterium implanted silicon
… that contribute to the interface states in the silicon band gap is the dangling bond, which degrades performance of MOS devices. Passivation of these bonds with hydrogen had been found to diminish their effect but the improvement degrades the operation due to hot electron effect. Passivation …
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Investigation of selective optical properties of Si/SiO2 nanostructures generated by pulsed laser ablation as-deposited and post-treated
Silicon and its derivatives like SiO2 are essential materials for industrial applications such as semiconductors, optoelectronics, and telecommunication. Optical properties of a large group of silicon/silica nanofibrous thin films are studied. A picosecond pulse laser was employed for indirect …
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Silicon/silicon Oxide Interface Roughness Studied by Scanning Tunneling Microscopy
Si/SiO2 interface roughness has been related to the inversion layer carrier mobility degradation, gate dielectric reliability, gate leakage current, and ballistic transmittance, yet the quantitatively measurement of the Si/SiO2 interface has not been achieved at the nanometer scale. For the first …
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Optical and Interface-Based Methods of Defect Engineering in Silicon
… industry for fabrication of source and drain transistor regions. Unfortunately, implantation causes considerable damage to the substrate lattice rendering most of the implanted dopant electrically inactive. Rapid thermal annealing (RTA) heals the damage by rapidly heating the substrate with a …
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Ic-Rest(2): A Time-to-Market Driven IC Reliability Statistics Tool
The tool combines TCAD simulation, short-time tests and novel solutions to the SiO2 and Si-SiO2 defect generation rate equations (in time and space) under static and dynamic operation. The predicted failure statistics are best described by the generalized Gamma-distribution (or more accurately the …
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Stabilization techniques and silicon-germanium saturable absorbers for high repetition rate mode-locked lasers
The monolithic integration of passively mode-locked solid-state lasers at highest repetition rates has been prevented by Q-switching instabilities and the lack of integrable saturable absorbers to date. In this thesis we demonstrate in theory and experiment that active feedback electronics …
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Preparation and characterization of vapour deposited films based on substituted 2,5-diphenyl-1,3,4-oxadiazole derivatives
Diese Arbeit befasst sich mit dem Einfluss der molekularen Struktur von 2,5-Diphenyl-1,3,4-Oxadiazol-Derivaten auf die Präparierung dünner Schichten mittels Vakuumdeposition. Dünne Schichten von diesen Substanzen wurden auf Si/SiO2 aufgedampft und ihre Struktur systematisch mittels XSR, AFM und IR …
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INVESTIGATION OF ELECTRIC AND THERMOELECTRIC PROPERTIES OF GRAPHENE NANORIBBON
In this thesis, we developed a method to fabricate ultra-narrow GNRs which is called helium ion Lithography (HIL) using helium ion microscope (HIM). Suspended GNRs with widths down to 5nm and supported GNRs with widths down to 20nm are patterned by directly modifying graphene strips through surface …
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Effect Of Surfaces On Strength Evolution Of Silicon Nanostructures
… a link between oxidation and strength changes in single crystal silicon nanostructures but provided no clues as to the mechanisms leading to this relationship. Through a mix of atomic force microscope based fracture strength experiments, molecular dynamics modeling, and comparisons to past …
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Advanced engineered substrates for the integration of lattice-mismatched materials with silicon
The dramatic advances in Si/SiO2-based microelectronic processing witnessed over the past several decades can largely be attributed to relatively material-independent device scaling. However, with physical and economic limitations to the continued scaling of such devices appearing on the horizon, …
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Mixed-Phase Solidification of Thin Silicon Films on Silicon Dioxide
In this thesis, we present a new beam-induced melt-mediated crystallization process called mixed-phase solidification (MPS) that can produce defect-free, large-grain polycrystalline-Si films with strong (100)-surface texture (>99%) on SiO2. Such a combination of microstructural attributes makes the …
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Investigation Of High-k Gate Dielectrics And Metals For Mosfet Devices.
Progress in advanced microlithography and deposition techniques have made feasible high- k dielectric materials for MOS transistors. The continued scaling of CMOS devices is pushing the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less …
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SiGe electro-absorption modulators for applications at 1550nm
A novel SixGe₁-x, electro-absorption modulator design is experimentally demonstrated. The device is waveguide integrated, butt-coupled into high index contrast Si/SiO2 waveguides. 0.75% Silicon concentration in the alloy is optimized for 1550nm applications. With its 400nm height, 600nm width, and …
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Gate leakage variability in nano-CMOS transistors
… is investigated through advanced modelling and simulations of planar, bulk-type MOSFETs. The motivation for the work stems from the two of the most challenging issues in front of the semiconductor industry - excessive leakage power, and device variability - both being brought about with the …
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Au nanorods-semiconductor nanowire hybrid nanostructures : nanofabrication techniques and optoelectronic properties
The objective of this thesis is the exploration and characterization of novel Au nanorod-semiconductor nanowire hybrid nanostructures. I provide a comprehensive bottom-up approach in which, starting from the synthesis and theoretical investigation of the optical properties of Au nanorods, I design, …
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Dielectrics on Gallium Arsenide Using Silicon as a Sacrificial Layer: Formation Kinetics and Interface State Densities
… reaction kinetics characterized in a dielectric/Si/GaAs structure formed by direct nitridation or UV ozone oxidation of a sacrificial pseudomorphic epitaxial Si layer on a GaAs (100) substrate. The nitridation and oxidation process kinetics were studied by X-ray photoelectron spectroscopy (XPS). …
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Radiation effects in metal-oxide-semiconductor capacitors
… of various radiations on commercially made Al-SiO2-Si Capacitors (MOSCs). Detailed studies of the electrical and physical nature of such devices have been used to characterise both virgin and irradiated devices. In particular, an investigation of the nature and causes of dielectric breakdown in …
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