Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 14 of 14 for “"Si/SiC"”.
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Design of Si/SiC hybrid structures for elevated temperature micro-turbomachinery
… the turbine inlet temperature, which in turn significantly degrades the overall engine efficiency. Previous studies have shown that hybrid structures of silicon and silicon carbide have good potential for improved engine performance. Detailed design of Si/SiC hybrid structures for high …
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Thermoelectric properties of Si/SiC thin-film superlattices grown by ion beam sputtering
… enhance the efficiency over those obtained using bulk materials. Some nano-scaled materials systems being considered are thin-film superlattices that utilize quantum confinement effects. Thin-film, superlattice thermoelectric devices could revolutionize traditional heat-to-work systems and …
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Dispositivi di Potenza Innovativi in Si, SiC e GaN: Modelli, Caratterizzazione e Aspetti Applicativi
I dispositivi di potenza a semiconduttore si stanno sempre più diffondendo, a causa delle nuove applicazioni nell’ambito delle energie rinnovabili e nei veicoli elettrici. L’esigenza di approfondire gli studi su questi argomenti è suggerita e stimolata anche dalla recente disponibilità dei nuovi …
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High Power Density and High Efficiency Converter Topologies for Renewable Energy Conversion and EV Applications
… (a three-level ANPC inverter utilizing hybrid Si/SiC switches and an Asymmetric Alternate Arm Converter (AAAC) topology) that are suitable for high efficiency and high-power density energy conversion systems. The operation principle, modulation, and control strategy of these newly introduced …
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Characterization of high temperature creep in siliconized silicon carbide using ultrasonic techniques
… to better understand the mechanisms of creep in Si/SiC and to determine if ultrasonics can be used in evaluating the severity of damage. The data indicated that both ultrasonic velocity and attenuation are directly related to creep strain and can be used in evaluating creep damage. Ultrasonic …
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Silicon carbide process development for microengine applications : residual stress control and microfabrication
The high power densities expected for the MIT microengine (silicon MEMS-based micro-gas turbine generator) require the turbine and compressor spool to rotate at a very high speed at elevated temperatures (1300 to 1700 K). However, the thermal softening of silicon (Si) at temperatures above 900 K …
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Lifetime Assessment and Real-Time Reliability Evaluation of SIC MOSFETs in Power Converters
The increasing adoption of Silicon Carbide (SiC) MOSFETs in modern power converters enables higher efficiency and faster switching but raises new challenges in reliability under thermal and electrical stresses. This thesis presents a comprehensive framework for assessing and enhancing the lifetime …
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Microfabricated refractory ceramic structures for micro turbomachinery
… of power-generating turbomachinery drive the design towards high rotational speeds and high temperatures. To achieve the specified performance requires materials with high specific strength and creep resistance at elevated temperatures. The thermal and mechanical properties of silicon carbide …
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Experimental Evaluation of Medium-Voltage Cascode Gallium Nitride (GaN) Devices for Bidirectional DC–DC Converters
… microgrids, energy storage systems play an increasingly significant role in ensuring uninterrupted power supply and in supporting the reliability and stability of microgrid operations. Power electronics, especially bidirectional DC–DC converters, are essential parts in distributed energy storage …
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Epitaxial Gallium Oxide Heterojunctions for Vertical Power Rectifiers
… electronic systems lies the semiconductor, responsible for passing large amounts of current at negligible power losses in the on-state, while instantaneously switching to withstand high voltages in the off-state. For decades silicon (Si) has dominated nearly all aspects of electronic systems …
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Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
… 4.5–4.9 eV, which is higher than the bandgap of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this wide-bandgap is the high critical electric field of Ga2O3, which is estimated to be from 5 MV/cm to 9 MV/cm. This allows a higher Baliga’s figure of merit (BFOM), …
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Robustness and Stability of Gallium Nitride Transistors in Dynamic Power Switching
… gallium nitride (GaN) high electron mobility transistors (HEMTs) are gaining increased adoption in applications like mobile electronics and data centers. Benefitting from the high channel mobility and the high breakdown field of GaN, GaN power HEMTs enable low specific on-resistance and small …
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Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
… of 4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this ultra-wide bandgap is the high-temperature stability due to the low intrinsic carrier concentration. Another benefit is the high critical electric field (Ec), which is …
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Towards High Efficiency and High Power Density Converter: System Level Design, Modulation, and Active EMI Filters
… strong challenges to its efficiency, power density and reliability. For the grid-connected inverter application, three-level (3-L) T-type neutral-point-clamped (TNPC) inverters has higher efficiency and lower total harmonic distortion (THD) compared to two-level inverter. Hybrid switch concept …